W29N02GVSIAA Datasheet, PDF (28/79 Pages) Winbond – W29N02GV 2G-BIT 3.3V NAND FLASH MEMORY

W29N02GV
Byte
128
129-130
131-132
133-134
135-136
137-138
139-140
141-163
164-165
166-253
254-255
256-511
512-767
>767
Description
I/O pin capacitance
Timing mode support
Program cache timing
Maximum page program time
Maximum block erase time
Maximum random read time
tCCS minimum
Reserved
Vendor specific revision #
Vendor specific
Integrity CRC
Value of bytes 0-255
Value of bytes 0-255
Additional redundant parameter pages
Value
0Ah
1Fh, 00h
1Fh, 00h
BCh, 02h
10h, 27h
19h, 00h
46h, 00h
00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h
01h,00h
00h
Set at shipment
x16 device : the ID is outputted at word units, and defined lower-byte (IO0-7). ID table shows only lower-byte ID.
Table 9-3 Parameter Page Output Value
9.1.7 READ STATUS (70h)
The W29N02GV has an 8-bit Status Register which can be read during device operation. Refer to
Table 9.3 for specific Status Register definitions. After writing 70h command to the Command
Register, read cycles will only read from the Status Register. The status can be read from I/O[7:0]
outputs, as long as #CE and #RE are LOW. Note; #RE does not need to be toggled for Status Register
read. The Command Register remains in status read mode until another command is issued. To
change to normal read mode, issue the PAGE READ (00h) command. After the PAGE READ
command is issued, data output starts from the initial column address.
Release Date: February 1^st, 2016
28
– Revision B