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LSM6DB0 Datasheet, PDF (17/66 Pages) STMicroelectronics – 3D accelerometer, 3D gyroscope and signal processor
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LSM6DB0
Mechanical characteristics
3.3
Microprocessor electrical characteristics
Characteristics measured in Table 5 are for recommended operating conditions unless
otherwise specified. Typical values are in reference to TA = 25 C, VDD =1.8 V.
Symbol
Parameter
Table 5. DC and AC parameters
Test conditions
Min. Typ. Max. Unit
VDD
Operating supply voltage
master serial port (DIO6 to
DIO10)
VDD1.8 Operating supply voltage
(DIO0 to DIO5)
Power consumption (Dhrystone without compiler options)
Reset
Active (CPU, Flash, and RAM)
Isupply
Supply current
From RAM
80 MHz (0.79 DMIPS/MHz)
40 MHz (0.79 DMIPS/MHz)
20 MHz (0.79 DMIPS/MHz)
16 MHz (0.79 DMIPS/MHz)
10 MHz (0.79 DMIPS/MHz)
From Flash
80 MHz (0.3 DMIPS/MHz)
40 MHz (0.43 DMIPS/MHz)
20 MHz (0.56 DMIPS/MHz)
16 MHz (0.79 DMIPS/MHz)
10 MHz (0.79 DMIPS/MHz)
Digital input and output (1.8 V supply)
CIN(1)
Port I/O capacitance
RPD(1)
Pull-down value
TRISE(1)
Rise time
TFALL(1)
Fall time
VIH(1) Logic high-level input voltage
VIL(1) Logic low-level input voltage
Digital input and output (3.3 V supply)
CIN(1)
RPD(1)
RPU(1)
TRISE(1)
TFALL(1)
Port I/O capacitance
Pull-down value
Pull-up value
Rise time
Fall time
0.1*VDD to 0.9*VDD, CL = 50 pF
0.9*VDD to 0.1*VDD, CL = 50 pF
0.1*VDD to 0.9*VDD, CL = 50 pF
0.9*VDD to 0.1*VDD, CL = 50 pF
1.71
1.75
1.3
117
10.3
11
0.65 VDD
1.3
53
57
1.4
1.5
1.8
50
10.3
5.95
3.85
3.48
2.9
7.5
5.5
4.74
4.34
3.7
1.4
211
1.4
84
81
3.6
V
1.95 V
nA
20
mA
1.7 pF
334 kW
19
ns
22
V
0.35 VDD
1.7 pF
144
kW
122
12
ns
12.5
DocID025603 Rev 1
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