K4J55323QG Datasheet, PDF (40/53 Pages) Samsung semiconductor – 256Mbit GDDR3 SDRAM

K4J55323QG
256M GDDR3 SDRAM
8.0 IBIS : I/V Characteristics for Input and Output Buffers
(2) OCD (40 Ω)
Voltage
(V)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
Pulldown Current (mA)
Minimum
Maximum
2.4
2.8
4.7
5.5
7.0
8.3
9.3
11.0
11.5
13.7
13.6
16.4
15.7
19.0
17.7
21.6
19.6
24.2
21.4
26.7
23.2
29.1
24.8
31.6
26.3
34.0
27.7
36.3
29.0
38.5
Pullup Current (mA)
Minimum
Maximum
-2.4
-4.7
-7.0
-9.2
-11.4
-13.4
-15.4
-17.1
-18.8
-20.3
-21.7
-22.9
-23.9
-24.8
-25.4
-3.1
-6.2
-9.2
-12.1
-14.9
-17.7
-20.3
-22.8
-25.2
-27.5
-29.6
-31.6
-33.3
-34.9
-36.3
Pull-Up
0
1
3
5
7
9
11
13
15
-5
-10
-15
-20
Min
Max
-25
-30
-35
-40
Voltage (V)
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Rev. 1.1 November 2005