K4J55323QG Datasheet, PDF (20/53 Pages) Samsung semiconductor – 256Mbit GDDR3 SDRAM

K4J55323QG
256M GDDR3 SDRAM
SCAN DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
PARAMETER/CONDITON
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
*Note : 1. The parameter applies only when SEN is asserted.
2. All voltages referenced to GND.
SYMBOL
V_IH(DC)
V_IL(DC)
MIN
V_REF+0.15
-
MAX
-
V_REF-0.15
UNITS
V
V
NOTES
1,2
1,2
SCK
SEN
SSH ^LOW
SOE
Pins
under Test
Figure 2. Scan Capture Timing
Not a true clock, but a single pulse or series of pulses
tSES
tSCS
tSDS tSDS
VALID
DON’T CARE
SCK
SEN
SSH
SOE
SOUT
Figure 3.Scan Shift Timing
tSES
tSCS
tSCS
tSAC
Scan Out
bit 0
tSOH
Scan Out
bit 1
Scan Out
bit 2
Scan Out
bit 3
TRANSITIONING DATA
20 of 53
Rev. 1.1 November 2005