4583 Datasheet, PDF (3/153 Pages) Renesas Technology Corp – SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER

4583 Group
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
PERFORMANCE OVERVIEW
Parameter
Function
Number of basic instructions
149
Minimum instruction execution time
Memory sizes ROM
RAM
0.5 µs (at 6.0 MHz oscillation frequency, in XIN through-mode)
16384 words ✕ 10 bits
384 words ✕ 4 bits
Input/Output D0–D6
ports
I/O (Input is Seven independent I/O ports;
examined by Port D6 is also used as CNTR0, respectively.
skip decision) The output structure is switched by software.
P00–P03 I/O
4-bit I/O port; a pull-up function, a key-on wakeup function and output structure can be switched
by software.
P10–P13 I/O
4-bit I/O port; a pull-up function, a key-on wakeup function and output structure can be switched
by software.
P20–P22 I/O
3-bit I/O port
P30, P31 I/O
2-bit I/O port ; ports P30 and P31 are also used as INT0 and INT1, respectively.
P60–P63 I/O
4-bit I/O port ; ports P60, P61 are also used as AIN0, AIN1, respectively.
Timers
Timer 1
8-bit timer with a reload register is also used as an event counter.
Also, this is equipped with a period/pulse width measurement function.
Timer 2
8-bit timer with a reload register.
Timer 3
8-bit timer with a reload register is also used as an event counter.
Timer 4
8-bit timer with two reload registers and PWM output function.
A/D converter
10-bit wide ✕ 2 ch, This is equipped with an 8-bit comparator function.
Interrupt
Sources
7 (two for external, four for timer, one for A/D)
Nesting
1 level
Subroutine nesting
8 levels
Device structure
CMOS silicon gate
Package
32-pin plastic molded LQFP (32P6U-A)
Operating temperature range
–20 °C to 85 °C
Supply voltage Mask ROM version
1.8 V to 5.5 V (It depends on operation source clock, oscillation frequency and operating mode.)
One Time PROM version 2.5 V to 5.5 V (It depends on operation source clock, oscillation frequency and operating mode.)
Power
Active mode
2.8 mA (Ta=25°C, VDD=5V, f(XIN)=6 MHz, f(STCK)=f(XIN), on-chip oscillator stop)
dissipation
70 µA (Ta=25°C, VDD=5V, f(XIN)=32 kHz, f(STCK)=f(XIN), on-chip oscillator stop)
(typical value)
150 µA (Ta=25°C, VDD=5V, on-chip oscillator is used, f(STCK)=f(RING), f(XIN) stop)
RAM back-up mode
0.1 µA (Ta=25°C, VDD = 5 V, output transistors in the cut-off state)
Rev.3.00 Aug 06, 2004 page 3 of 151
REJ03B0009-0300Z