4583 Datasheet, PDF (150/153 Pages) Renesas Technology Corp – SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER

4583 Group
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
(1) PROM mode
The built-in PROM version has a PROM mode in addition to a nor-
mal operation mode. The PROM mode is used to write to and read
from the built-in PROM.
In the PROM mode, the programming adapter can be used with a
general-purpose PROM programmer to write to or read from the
built-in PROM as if it were M5M27C256K.
Programming adapter is listed in Table 22. Contact addresses at
the end of this data sheet for the appropriate PROM programmer.
• Writing and reading of built-in PROM
Programming voltage is 12.5 V. Write the program in the PROM of
the built-in PROM version as shown in Figure 70.
(2) Notes on handling
➀A high-voltage is used for writing. Take care that overvoltage is
not applied. Take care especially at turning on the power.
➁For the One Time PROM version shipped in blank, Renesas
Technology Corp. does not perform PROM writing test and
screening in the assembly process and following processes. In
order to improve reliability after writing, performing writing and
test according to the flow shown in Figure 71 before using is rec-
ommended (Products shipped in blank: PROM contents is not
written in factory when shipped).
(3) Electric Characteristic Differences
Between Mask ROM and One Time PROM
Version MCU
There are differences in electric characteristics, operation mar-
gin, noise immunity, and noise radiation between Mask ROM and
One Time PROM version MCUs due to the difference in the
manufacturing processes.
When manufacturing an application system with the One time
PROM version and then switching to use of the Mask ROM ver-
sion, please perform sufficient evaluations for the commercial
samples of the Mask ROM version.
Table 22 Programming adapter
Microcomputer
Name of Programming Adapter
M34583EDFP
PCA7442FP
Address
000016
1
11
D4 D3 D2 D1 D0
Low-order 5 bits
3FFF16
400016 ₁
11
D4 D3 D2 D1 D0
High-order 5 bits
7FFF16
Fig. 70 PROM memory map
Writing with PROM programmer
Screening (Leave at 150 °C for 40 hours) (Note)
Verify test with PROM programmer
Function test in target device
Note: Since the screening temperature is higher
than storage temperature, never expose the
microcomputer to 150 °C exceeding 100
hours.
Fig. 71 Flow of writing and test of the product shipped in blank
Rev.3.00 Aug 06, 2004 page 150 of 151
REJ03B0009-0300Z