RX64M_15 Datasheet, PDF (217/230 Pages) Renesas Technology Corp – Renesas MCUs

RX64M Group
5. Electrical Characteristics
Table 5.54 Data Flash Memory Characteristics
Conditions: VCC = AVCC0 = AVCC1 = VCC_USB = V_BATT = 2.7 to 3.6 V, 2.7 ≤ VREFH0 ≤ AVCC0,
VCC_USBA = AVCC_USBA = 3.0 to 3.6 V
VSS = AVSS0 = AVSS1 = VREFL0 = VSS_USB = VSS1_USBA = VSS2_USBA = PVSS_USBA = AVSS_USBA = 0 V,
Temperature range for programming/erasure: T_a = T_opr
FCLK = 4 MHz
20 MHz ≤ FCLK ≤ 60 MHz
Item
Symbol
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Programming time
4 bytes
Erasure time
64 bytes
Blank check time
4 bytes
Reprogramming/erasure cycle*¹
t_DP4
—
TBD
TBD
—
0.3
1.7
ms
t_DE64
—
TBD
TBD
—
3
10
ms
t_DBC4
—
—
TBD
—
—
30
μs
N_DPEC
100000
—
—
100000
—
—
—
*²
*²
Suspend delay time during programming t_DSPD
—
First suspend delay time during erasure t_DSESD1
—
(in suspend priority mode)
—
TBD
—
—
TBD
—
—
120
μs
—
120
μs
Second suspend delay time during
erasure
(in suspend priority mode)
t_DSESD2
—
—
TBD
—
—
300
μs
Suspend delay time during erasing
(in erasure priority mode)
t_DSEED
—
—
TBD
—
—
300
μs
Forced stop command
Data hold time*³
t_FD
—
TBD
—
—
—
20
μs
t_DDRP
10
—
—
10
—
—
—
Note 1. Definition of reprogram/erase cycle:
The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000),
erasing can be performed n times for each block. For instance, when 4-byte programming is performed 512 times for different
addresses in 2-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,
programming the same address for several times as one erasing is not enabled (overwriting is prohibited).
Note 2. This is the minimum number of times to guarantee all the characteristics after reprogramming (guaranteed range is from 1 to the
value of the minimum value).
Note 3. This shows the characteristics when reprogramming is performed within the specified range, including the minimum value.
R01DS0173EJ0100 Rev.1.00
Jul 31, 2014
Page 217 of 230