MC68HC908JL3E Datasheet, PDF (48/226 Pages) Motorola, Inc – Microcontrollers

FLASH Memory (FLASH)
4.7 FLASH Program Operation
Programming of the FLASH memory is done on a row basis. A row
consists of 32 consecutive bytes starting from addresses $XX00,
$XX20, $XX40, $XX60, $XX80, $XXA0, $XXC0 or $XXE0. Use this
step-by-step procedure to program a row of FLASH memory:
(Figure 4-3 shows a flowchart of the programming algorithm.)
NOTE:
NOTE:
1. Set the PGM bit. This configures the memory for program
operation and enables the latching of address and data for
programming.
2. Write any data to any FLASH location within the address range of
the row to be programmed.
3. Wait for a time, t_nvs (10µs).
4. Set the HVEN bit.
5. Wait for a time, t_pgs (5µs).
6. Write data to the byte being programmed.
7. Wait for time, t_PROG (30µs).
8. Repeat step 6 and 7 until all the bytes within the row are
programmed.
9. Clear the PGM bit.
10. Wait for time, t_nvh (5µs).
11. Clear the HVEN bit.
12. After time, t_rcv (1µs), the memory can be accessed in read mode
again.
This program sequence is repeated throughout the memory until all data
is programmed.
The time between each FLASH address change (step 6 to step 6), or the
time between the last FLASH addressed programmed to clearing the
PGM bit (step 6 to step 10), must not exceed the maximum programming
time, t_PROG max.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps.
Technical Data
48
MC68H(R)C908JL3E/JK3E/JK1E — Rev. 2.0
FLASH Memory (FLASH)
MOTOROLA