MC68HC908JL3E Datasheet, PDF (46/226 Pages) Motorola, Inc – Microcontrollers

FLASH Memory (FLASH)
4.5 FLASH Page Erase Operation
Use the following procedure to erase a page of FLASH memory. A page
consists of 64 consecutive bytes starting from addresses $XX00,
$XX40, $XX80 or $XXC0. The 48-byte user interrupt vectors area also
forms a page. Any page within the 4K bytes user memory area
($EC00–$FBFF) can be erased alone. The 48-byte user interrupt
vectors cannot be erased by the page erase operation because of
security reasons. Mass erase is required to erase this page.
1. Set the ERASE bit and clear the MASS bit in the FLASH Control
Register.
2. Write any data to any FLASH address within the page address
range desired.
3. Wait for a time, t_nvs (10µs).
4. Set the HVEN bit.
5. Wait for a time t_Erase (1ms).
6. Clear the ERASE bit.
7. Wait for a time, t_nvh (5µs).
8. Clear the HVEN bit.
9. After time, t_rcv (1µs)_, the memory can be accessed in read mode
again.
NOTE:
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
Technical Data
46
MC68H(R)C908JL3E/JK3E/JK1E — Rev. 2.0
FLASH Memory (FLASH)
MOTOROLA