HYB18T1G400AF Datasheet, PDF (72/89 Pages) Infineon Technologies AG – 1 Gbit DDR2 SDRAM

HYB18T1G400/800/160AF
1Gb DDR2 SDRAM
6. IDD Specifications and Measurement Conditions
6.1 IDD Specifications
(VDDQ = 1.8V ± 0.1V; VDD = 1.8V ± 0.1V, 0 ^oC to T_CASEmax.)
Symbol
Parameter/Condition
IDD0 Operating Current
IDD1 Operating Current
IDD2P Precharge Power-Down Current
IDD2N Precharge Standby Current
IDD2Q Precharge Quiet Standby Current:
IDD3P
Active Power-Down Standby
Current
MRS(12)=0
MRS(12)=1
IDD3N Active Standby Current
IDD4R Operating Current Burst Read
I/O
x4/ x8
x16
-5
DDR2 -400
max.
70
75
x4/ x8
80
x16
90
all
5
all
35
all
28
all
13
all
5
all
40
x4/ x8
90
x16
105
IDD4W Operating Current Burst Write
x4/ x8
95
x16
110
IDD5B Burst Auto-Refresh Current (tRFC=tRFCmin)
all
180
IDD5D Distributed Auto-Refresh Current (tRFC=7.8 µs) all
7
IDD6 Self-Refresh Current for standard products
all
5
IDD6L Self-Refresh Current for low power products
all
2
IDD7 Operating Current (8 banks interleave)
x4/ x8
195
x16
255
-3.7
DDR2 -533
max.
75
80
85
95
5
46
32
17
5
50
110
130
115
135
185
7
5
2
205
270
-3 & -3S
DDR2 -667
Unit
max.
80
85
mA
95
105
mA
5
mA
56
mA
39
mA
21
mA
5
mA
60
mA
130
155
mA
135
165
mA
190
mA
7
mA
5
mA
2
mA
215
285
mA
Page 72
Rev. 1.02
May 2004
INFINEON Technologies