HYB18T1G400AF Datasheet, PDF (49/89 Pages) Infineon Technologies AG – 1 Gbit DDR2 SDRAM

HYB18T1G400/800/160AF
1Gb DDR2 SDRAM
Burst Read with Auto-Precharge followed by an Activation to the Same Bank:
RL = 4 (AL = 1, CL = 3), BL = 8, tRTP <= 2 clocks
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK, CK
CMD
Posted CAS
REA D w/AP
NOP
A10 ="high"
DQS,
DQS
DQ
AL = 1
NOP
NOP
AL + BL/2
NOP
NOP
NOP
tRP
Auto-Precharge Begins
NOP
Bank
A c tiv a te
CL = 3
RL = 4
Dout A0 Dout A1 Dout A2 Dout A3 Dout A4 Dout A5 Dout A6 Dout A7
>= tRTP
first 4-bit prefetch
second 4-bit prefetch
BR-AP413(8)2
Burst Read with Auto-Precharge followed by an Activation to the Same Bank:
RL = 4 (AL = 1, CL = 3), BL = 4, tRTP > 2 clocks
T0
T1
T2
T3
T4
T5
T6
CK, CK
CMD
DQS,
DQS
DQ
Posted CAS
REA D w/AP
NOP
NOP
NOP
NOP
NOP
NOP
A10 ="high"
AL + tRTP + tRP
Auto-Precharge Begins
AL = 1
CL = 3
RL = 4
tRTP
Dout A0 Dout A1 Dout A2 Dout A3
tRP
first 4-bit prefetch
T7
T8
Bank
A c tiv a te
NOP
BR-AP4133
Page 49
Rev. 1.02
May 2004
INFINEON Technologies