HYB18T1G400AF Datasheet, PDF (58/89 Pages) Infineon Technologies AG – 1 Gbit DDR2 SDRAM

HYB18T1G400/800/160AF
1Gb DDR2 SDRAM
Precharge Power Down Mode Entry and Exit
T0
T1
T2
T3
CK, CK
Tn
Tn+1
Tn+2
CM D ^Precharge
*)
NOP
NOP
CKE
tRP
NOP
NOP
tIS
NOP
NOP
tIS
tXP
V alid
Com mand
NOP
Precharge
Power-Down
Entry
Precharge
Power-Down
Exit
*) "Precharge" may be an external command or an internal
precharge following Write with AP.
PrePD
Auto-Refresh command to Power-Down entry
T0
CK, CK
CMD
CKE
T1
T2
T3
T4
Tn
Auto
Refresh
tRFC
tXP
tis
CKE can go low one clock after an Auto-Refresh command
When tRFC expires the DRAM is in Precharge Power-Down Mode
Valid
Command
ARPD
MRS, EMRS command to Power-Down entry
T0
T1
T2
T3
T4
T5
T6
T7
CK, CK
CMD
CKE
MRS or
EMRS
t_MRD
Enters Precharge Power-Down Mode
MRS_PD
Page 58
Rev. 1.02
May 2004
INFINEON Technologies