HYB18T1G400AF Datasheet, PDF (69/89 Pages) Infineon Technologies AG – 1 Gbit DDR2 SDRAM

HYB18T1G400/800/160AF
1Gb DDR2 SDRAM
5.4.2 Full Strength Default Pull-down Driver Characteristics
Voltage (V)
Minimum
Pull-down Driver Current [mA]
Nominal Default low Nominal Default high
0.2
8.5
11.3
0.3
12.1
16.5
0.4
14.7
21.2
0.5
16.4
25.0
0.6
17.8
28.3
0.7
18.6
30.9
0.8
19.0
33.0
0.9
19.3
34.5
1.0
19.7
35.5
1.1
19.9
36.1
1.2
20.0
36.6
1.3
20.1
36.9
1.4
20.2
37.1
1.5
20.3
37.4
1.6
20.4
37.6
1.7
20.6
37.7
1.8
37.9
1.9
The driver characteristics evaluation conditions are:
Nominal Default 25^oC (Tcase), VDDQ = 1.8 V, typical process
Minimum 95 ^oC (Tcase), VDDQ = 1.7V, slow-slow process
Maximum 0 ^oC (Tcase). VDDQ = 1.9 V, fast-fast process
11.8
16.8
22.1
27.6
32.4
36.9
40.9
44.6
47.7
50.4
52.6
54.2
55.9
57.1
58.4
59.6
60.9
Maximum
15.9
23.8
31.8
39.7
47.7
55.0
62.3
69.4
75.3
80.5
84.6
87.7
90.8
92.9
94.9
97.0
99.1
101.1
120
100
80
60
40
20
0
0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2
VOUT to VSSQ (V)
Minimum
Nominal Default Low
Nominal Default High
Maximum
Page 69
Rev. 1.02
May 2004
INFINEON Technologies