MC9S08LC60 Datasheet, PDF (51/358 Pages) Freescale Semiconductor, Inc – Microcontrollers

FLASH PROGRAM AND
ERASE FLOW
WRITE TO FCDIV ^{(Note 1)}
Chapter 4 Memory
Note 1: Required only once after reset.
START
0
FACCERR ?
1
CLEAR ERROR
WRITE TO FLASH
TO BUFFER ADDRESS AND DATA
WRITE COMMAND TO FCMD
WRITE 1 TO FCBEF
TO LAUNCH COMMAND
AND CLEAR FCBEF ^{(Note 2)}
Note 2: Wait at least four bus cycles
before checking FCBEF or FCCF.
FPVIOL OR
YES
FACCERR ?
NO
ERROR EXIT
0
FCCF ?
1
DONE
Figure 4-2. FLASH Program and Erase Flowchart
4.4.4 Burst Program Execution
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. For the MC9S08LC60 Series, it is possible to burst across
FLASH array boundaries as long as the addresses are consecutive. This is possible because the high
voltage to the FLASH array does not need to be disabled between program operations. Ordinarily, when a
program or erase command is issued, an internal charge pump associated with the FLASH memory must
be enabled to supply high voltage to the array. Upon completion of the command, the charge pump is
turned off. When a burst program command is issued, the charge pump is enabled and then remains
enabled after completion of the burst program operation if these two conditions are met:
• The next burst program command has been queued before the current program operation has
completed.
• The next sequential address selects a byte on the same physical row as the current byte being
programmed. A row of FLASH memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.
MC9S08LC60 Series Advance Information Data Sheet, Rev. 2
Freescale Semiconductor
PRELIMINARY
51