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MC9S08LC60 Datasheet, PDF (347/358 Pages) Freescale Semiconductor, Inc – Microcontrollers
Appendix A Electrical Characteristics
A.11 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
For more detailed information about program/erase operations, see Chapter 4, “Memory.”
Table A-13. FLASH Characteristics
Characteristic
Symbol
Min
Typical
Max
Unit
Supply voltage for program/erase
Vprog/erase
1.8
3.6
V
Supply voltage for read operation
0 < fBus < 8 MHz
0 < fBus < 20 MHz
Internal FCLK frequency(1)
VRead
fFCLK
1.8
2.08
150
3.6
V
3.6
200
kHz
Internal FCLK period (1/FCLK)
tFcyc
5
6.67
µs
Byte program time (random
location)(2)
tprog
9
tFcyc
Byte program time (burst mode)(2)
Page erase time(2)
Mass erase time(2)
Program/erase endurance(3)
TL to TH = –40°C to + 85°C
T = 25°C
tBurst
tPage
tMass
4
4000
20,000
10,000
—
100,000
—
tFcyc
tFcyc
tFcyc
cycles
Data retention(4)
tD_ret
15
100
—
years
1 The frequency of this clock is controlled by a software setting.
2 These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
3 Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional
information on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin
EB619/D, Typical Endurance for Nonvolatile Memory.
4 Typical data retention values are based on intrinsic capability of the technology measured at high temperature
and de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor
defines typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for
Nonvolatile Memory.
MC9S08LC60 Series Advance Information Data Sheet, Rev. 2
Freescale Semiconductor
PRELIMINARY
347