MC68HC908GR8A_07 Datasheet, PDF (248/260 Pages) Freescale Semiconductor, Inc – Microcontrollers

Electrical Specifications
19.16 Timer Interface Module Characteristics
Characteristic
Input capture pulse width
Symbol
Min
Max
Unit
t_TIH, t_TIL
1
—
t_cyc
19.17 Memory Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
RAM data retention voltage
FLASH program bus clock frequency
FLASH read bus clock frequency
FLASH page erase time
Limited endurance (<1 K cycles)
Maximum endurance (>1 K cycles)
V_RDR
1.3
—
—
V
—
1
—
—
MHz
f_Read(1)
—
—
8.2
MHz
t_Erase
0.9
1
1.1
ms
3.6
4
5.5
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH endurance⁽⁴⁾
FLASH data retention time⁽⁵⁾
t_MErase
t_NVS
t_NVH
t_NVHL
t_PGS
t_PROG
t_RCV(2)
t_HV(3)
—
—
4
10
5
100
5
30
1
—
10 k
15
—
—
—
—
—
—
—
—
100 k
100
—
ms
—
μs
—
μs
—
μs
—
μs
40
μs
—
μs
4
ms
—
Cycles
—
Years
1. f_Read is defined as the frequency range for which the FLASH memory can be read.
2. t_RCV is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by
clearing HVEN to 0.
3. t_HV is defined as the cumulative high voltage programming time to the same row before next erase.
t_HV must satisfy this condition: t_NVS + t_NVH + t_PGS + (t_PROG x 32) ≤ t_HV maximum.
4. Typical endurance was evaluated for this product family. For additional information on how Freescale defines Typical
Endurance, please refer to Engineering Bulletin EB619.
5. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
MC68HC908GR8A • MC68HC908GR4A Data Sheet, Rev. 5
248
Freescale Semiconductor