CC2510F16 Datasheet, PDF (86/244 Pages) Texas Instruments – Low-Power SoC (System-on-Chip) with MCU, Memory, 2.4 GHz RF Transceiver, and USB Controller

CC2510Fx / CC2511Fx
FCTL (0xAE) - Flash Control
Bit Field Name
7
BUSY
6
SWBSY
5
4
CONTRD
3:2
1
WRITE
0
ERASE
Reset
0
0
-
R/W
-
0
0
R/W Description
R
Indicates that write or erase is in operation when set to 1
R
Indicates that a flash write is in progress. This byte is set to 1 after two bytes
has been written to FWDATA.
Do not write to FWDATA register while this bit is set.
R0 Not used
0
Continuous read enable
0 Disable. To avoid wasting power, continuous read should only be enabled
when needed
1 Enable. Reduces internal switching of read enables, but greatly increases
power consumption.
R0 Not used
R0/ When set to 1, a program command used to write data to flash memory is
W
initiated.
If ERASE is set to 1at the same time as this bit is set to 1, a page erase of the
whole page addressed by FADDRH[6:1] is performed before the write.
This bit will be 0 when returning from PM2 and PM3
R0/ Page Erase. Erase page given by FADDRH[5:1].
W
This bit will be 0 when returning from PM2 and PM3
FWDATA (0xAF) - Flash Write Data
Bit Field Name
Reset
7:0 FWDATA[7:0] 0x00
R/W Description
R/W If FCTL.WRITE is set to 1, writing two bytes in a row to this register starts the
actual writing to flash memory. FCTL.SWBSY will be 1 during the actual flash
write
FADDRH (0xAD) - Flash Address High Byte
Bit Field Name
Reset
R/W Description
7:6
0
R/W Not used
5:0 FADDRH[5:0] 000000 R/W Page address / High byte of flash word address
Bits 5:1 will select which page to access.
FADDRL (0xAC) - Flash Address Low Byte
Bit Field Name
Reset
7:0 FADDRL[7:0] 0x00
R/W Description
R/W Low byte of flash address
FWT (0xAB) - Flash Write Timing
Bit Field Name
7:6
5:0 FWT[5:0]
Reset
0
0x11
R/W Description
R/W Not used
R/W Flash Write Timing. Controls flash timing generator.
21000 ⋅ F
FWT =
, where F is the system clock frequency (see Section 12.3.5)
16 ⋅10⁹
SWRS055F
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