CC2510F16 Datasheet, PDF (15/244 Pages) Texas Instruments – Low-Power SoC (System-on-Chip) with MCU, Memory, 2.4 GHz RF Transceiver, and USB Controller

CC2510Fx / CC2511Fx
6.3 RF Transmit Section
T_A = 25°C, VDD = 3.0 V if nothing else stated. All measurement results are obtained using the
CC2510EM reference designs ([1]).
Parameter
Differential load
impedance
Output power, highest
setting
Output power, lowest
setting
Occupied bandwidth
(99%)
Spurious emissions
25 MHz - 1 GHz
Min
Typ
Max
80 + j74
1
−30
−28
−27
−22
−21
−36
Unit
Ω
dBm
dBm
dBc
dBc
dBc
dBc
dBm
Condition/Note
Differential impedance as seen from the RF-port (RF_P and
RF_N) towards the antenna. Follow the CC2510EM
reference design [1] available from TI’s website.
Output power is programmable and is available across the
entire frequency band. See Figure 3 typical variation over
operating conditions (output power is 0 dBm)
Delivered to a 50 Ω single-ended load via the CC2510EM
reference design [1] RF matching network.
Output power is programmable and is available across the
entire frequency band
Delivered to a 50 Ω single-ended load via the CC2510EM
reference design [1] RF matching network.
2.4 kBaud, 38.2 kHz deviation, 2-FSK, 250 kHz channel
spacing
10 kBaud, 38.2 kHz deviation, 2-FSK, 250 kHz channel
spacing
250 kBaud, MSK, 750 kHz channel spacing
500 kBaud, MSK, 1 MHz channel spacing
0 dBm output power.
47 - 74, 87.5 - 118,
174 - 230, and
470 - 862 MHz
1800 - 1900 MHz
At 2·RF and 3·RF
Otherwise above
1 GHz
−54 dBm
−47 dBm Restricted band in Europe
−41 dBm Restricted bands in USA
−30 dBm
Table 10: RF Transmit Section
Typical Variation in Output Power (0 dBm) over Frequency and
Temperature
2
0
-2
-2
2400 2408 2416 2424 2432 2440 2448 2456 2464 2472 2480
Frequency [MHz]
Avg -40°C
Avg +85°C
Avg +25°C
Figure 3: Typical Variation in Output Power over Frequency and Temperature
(0 dBm output power)
SWRS055F
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