LM3S3749 Datasheet, PDF (829/898 Pages) Texas Instruments – Stellaris® LM3S3749 Microcontroller

Stellaris® LM3S3749 Microcontroller
23.1.6
23.1.7
23.1.8
Table 23-5. Detailed Power Specifications (continued)
Parameter
Parameter
Name
Conditions
I_{DD_HIBERNATE} Hibernate
mode
V_BAT = 3.0 V
V_DD = 0 V
V_DD25 = 0 V
V_DDA = 0 V
Peripherals = All OFF
System Clock = OFF
Hibernate Module = 32 kHz
a. Pending characterization completion.
3.3 V V_DD, V_DDA 2.5 V V_DD25
Nom Max Nom Max
0
0
0
0
3.0 V V_BAT
Nom Max
Unit
16 pending^a µA
Flash Memory Characteristics
Table 23-6. Flash Memory Characteristics
Parameter Parameter Name
Min
PE_CYC
Number of guaranteed program/erase cycles
before failure^a
10,000
T_RET
Data retention at average operating
10
temperature of 85˚C
T_PROG
Word program time
20
T_ERASE
Page erase time
20
T_ME
Mass erase time
-
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
Hibernation
Nom
Max
100,000
-
-
-
-
-
-
-
-
250
Unit
cycles
years
µs
ms
ms
Table 23-7. Hibernation Module DC Characteristics
Parameter
V_LOWBAT
R_WAKEPU
Parameter Name
Low battery detect voltage
WAKE internal pull-up resistor
Value
Unit
2.35
V
200
kΩ
USB
The Stellaris^® USB controller DC electrical specifications are compliant with the “Universal Serial
Bus Specification Rev. 2.0” (full-speed and low-speed support). Some components of the USB
system are integrated within the LM3S3749 microcontroller and specific to the Stellaris microcontroller
design. These components are specified in Table 23-8 on page 829.
Table 23-8. USB Controller DC Characteristics
Parameter
Parameter Name
Value
Unit
R_BIAS
Value of the pull-down resistor on the USB0RBIAS pin
9.1K ± 1 %
Ω
November 17, 2011
829
Texas Instruments-Production Data