LM3S5737 Datasheet, PDF (778/833 Pages) Texas Instruments – Stellaris® LM3S5737 Microcontroller

Electrical Characteristics
Figure 21-9. Hibernation Module Timing
32.768 KHz
(internal)
H1
HIB
WAKE
H2
H4
H3
21.2.7
21.2.8
General-Purpose I/O (GPIO)
Note: All GPIOs are 5 V-tolerant.
Table 21-19. GPIO Characteristics
Parameter Parameter Name Condition
Min
2-mA drive
GPIO Rise Time
4-mA drive
t_GPIOR
(from 20% to 80%
of V_DD)
8-mA drive
-
8-mA drive with slew rate control
2-mA drive
GPIO Fall Time
4-mA drive
t_GPIOF
(from 80% to 20%
of V_DD)
8-mA drive
-
8-mA drive with slew rate control
Analog-to-Digital Converter
Table 21-20. ADC Characteristics^a
Parameter Parameter Name
Min
Maximum single-ended, full-scale analog input
-
voltage
Minimum single-ended, full-scale analog input
0.0
V_ADCIN
voltage
Maximum differential, full-scale analog input voltage -
Minimum differential, full-scale analog input voltage 0.0
N
Resolution
f_ADC
ADC internal clock frequency^b
14
t_ADCCONV Conversion time^c
f _ADCCONV Conversion rate^c
t_LT
Latency from trigger to start of conversion
-
I_L
ADC input leakage
-
R_ADC
ADC equivalent resistance
-
C_ADC
ADC equivalent capacitance
0.9
E_L
Integral nonlinearity error
-
E_D
Differential nonlinearity error
-
Nom
17
9
6
10
17
8
6
11
Nom
-
-
-
-
10
16
2
500
2
-
-
1.0
-
-
Max
Unit
26
ns
13
ns
9
ns
12
ns
25
ns
12
ns
10
ns
13
ns
Max
Unit
3.0
V
-
V
1.5
V
-
V
bits
18
MHz
µs
k samples/s
-
system clocks
±3.0
µA
10
kΩ
1.1
pF
±3
LSB
±2
LSB
778
November 17, 2011
Texas Instruments-Production Data