LM3S1N16 Datasheet, PDF (755/794 Pages) Texas Instruments – Stellaris® LM3S1N16 Microcontroller

Stellaris^® LM3S1N16 Microcontroller
Figure 20-12. Hibernation Module Timing with Internal Oscillator Stopped in Hibernation
32.768 KHz
(internal)
H1
H8
H2
HIB
H4
WAKE
H6
20.11 Flash Memory
20.12
Table 20-19. Flash Memory Characteristics
Parameter
Parameter Name
Min
Nom
Max
PE_CYC
Number of guaranteed program/erase cycles 15,000
before failure^a
-
-
T_RET
Data retention, -40˚C to +85˚C
10
T_PROG
Word program time
-
T_BPROG
Buffer program time
-
T_ERASE
Page erase time
-
T_ME
Mass erase time
-
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
-
-
-
1
-
1
-
12
-
16
Unit
cycles
years
ms
ms
ms
ms
Input/Output Characteristics
Note: All GPIOs are 5-V tolerant, except PB0 and PB1. See “Signal Description” on page 385 for
more information on GPIO configuration.
Table 20-20. GPIO Module Characteristics
Parameter Parameter Name
Min
Nom
Max
Unit
R_GPIOPU GPIO internal pull-up resistor
100
-
300
kΩ
R_GPIOPD
I_LKG
GPIO internal pull-down resistor
GPIO input leakage current^a
GPIO Rise Time, 2-mA drive^b
200
-
500
kΩ
-
-
2
µA
14
20
ns
T_GPIOR
GPIO Rise Time, 4-mA drive^b
GPIO Rise Time, 8-mA drive^b
7
10
ns
-
4
5
ns
GPIO Rise Time, 8-mA drive with slew rate control^b
6
8
ns
GPIO Fall Time, 2-mA drive^c
14
21
ns
T_GPIOF
GPIO Fall Time, 4-mA drive^c
GPIO Fall Time, 8-mA drive^c
7
11
ns
-
4
6
ns
GPIO Fall Time, 8-mA drive with slew rate control^c
6
8
ns
a. The leakage current is measured with GND or VDD applied to the corresponding pin(s). The leakage of digital port pins
is measured individually. The port pin is configured as an input and the pullup/pulldown resistor is disabled.
b. Time measured from 20% to 80% of V_DD.
c. Time measured from 80% to 20% of V_DD.
January 21, 2012
755
Texas Instruments-Production Data