LM3S1N16 Datasheet, PDF (296/794 Pages) Texas Instruments – Stellaris® LM3S1N16 Microcontroller

Internal Memory
■ ERASE -> PROGRAM value -> PROGRAM value
7.2.3.4
7.2.3.5
To perform an erase of a 1-KB page
1. Write the page address to the FMA register.
2. Write the Flash memory write key and the ERASE bit (a value of 0xA442.0002) to the FMC
register.
3. Poll the FMC register until the ERASE bit is cleared or, alternatively, enable the programming
interrupt using the PMASK bit in the FCIM register.
To perform a mass erase of the Flash memory
1. Write the Flash memory write key and the MERASE bit (a value of 0xA442.0004) to the FMC
register.
2. Poll the FMC register until the MERASE bit is cleared or, alternatively, enable the programming
interrupt using the PMASK bit in the FCIM register.
32-Word Flash Memory Write Buffer
A 32-word write buffer provides the capability to perform faster write accesses to the Flash memory
by concurrently programing 32 words with a single buffered Flash memory write operation. The
buffered Flash memory write operation takes the same amount of time as the single word write
operation controlled by bit 0 in the FMC register. The data for the buffered write is written to the
Flash Write Buffer (FWBn) registers.
The registers are 32-word aligned with Flash memory, and therefore the register FWB0 corresponds
with the address in FMA where bits [6:0] of FMA are all 0. FWB1 corresponds with the address in
FMA + 0x4 and so on. Only the FWBn registers that have been updated since the previous buffered
Flash memory write operation are written. The Flash Write Buffer Valid (FWBVAL) register shows
which registers have been written since the last buffered Flash memory write operation. This register
contains a bit for each of the 32 FWBn registers, where bit[n] of FWBVAL corresponds to FWBn.
The FWBn register has been updated if the corresponding bit in the FWBVAL register is set.
To program 32 words with a single buffered Flash memory write operation
1. Write the source data to the FWBn registers.
2. Write the target address to the FMA register. This must be a 32-word aligned address (that is,
bits [6:0] in FMA must be 0s).
3. Write the Flash memory write key and the WRBUF bit (a value of 0xA442.0001) to the FMC2
register.
4. Poll the FMC2 register until the WRBUF bit is cleared or wait for the PMIS interrupt to be signaled.
Non-Volatile Register Programming
This section discusses how to update the registers shown in Table 7-2 on page 298 that are resident
within the Flash memory itself. These registers exist in a separate space from the main Flash memory
array and are not affected by an ERASE or MASS ERASE operation. With the exception of the Boot
Configuration (BOOTCFG) register, the settings in these registers can be written, their functions
296
January 21, 2012
Texas Instruments-Production Data