LM3S6611 Datasheet, PDF (598/647 Pages) List of Unclassifed Manufacturers – Microcontroller

Electrical Characteristics
19.2.3
Table 19-11. Clock Characteristics (continued)
Parameter Parameter Name
Min
f_{XOSC_EXT}
External clock reference for hibernation
-
module
f_MOSC
Main oscillator frequency
1
t_{MOSC_per}
Main oscillator period
125
f_{ref_crystal_bypass}
Crystal reference using the main oscillator
1
(PLL in BYPASS mode)
f_{ref_ext_bypass}
External clock reference (PLL in BYPASS
0
mode)
f_{system_clock}
System clock
0
Nom
32.768
-
-
-
-
-
Max
-
8.192
1000
8.192
50
50
Unit
KHz
MHz
ns
MHz
MHz
MHz
Table 19-12. Crystal Characteristics
Parameter Name
Value
Frequency
Frequency tolerance^a
8
6
4
±50
±50
±50
Oscillation mode
Parallel
Parallel
Parallel
Motional capacitance (typ)
27.8
37.0
55.6
Motional inductance (typ)
14.3
19.1
28.6
Equivalent series resistance (max)
120
160
200
Shunt capacitance (max)
10
10
10
Load capacitance (typ)
16
16
16
Drive level (typ)
100
100
100
a. This tolerance provides a guard band for temperature stability and aging drift.
JTAG and Boundary Scan
3.5
±50
Parallel
63.5
32.7
220
10
16
100
Units
MHz
ppm
-
pF
mH
Ω
pF
pF
µW
Table 19-13. JTAG Characteristics
Parameter
No.
Parameter Parameter Name
Min
Nom
J1
f_TCK
TCK operational clock frequency
0
-
J2
t_TCK
TCK operational clock period
100
-
J3
t_{TCK_LOW}
TCK clock Low time
J4
t_{TCK_HIGH}
TCK clock High time
J5
t_{TCK_R}
TCK rise time
J6
t_{TCK_F}
TCK fall time
-
t_TCK/2
-
t_TCK/2
0
-
0
-
J7
t_{TMS_SU}
TMS setup time to TCK rise
20
-
J8
t_{TMS_HLD}
TMS hold time from TCK rise
J9
t_{TDI_SU}
TDI setup time to TCK rise
J10
t_{TDI_HLD}
TDI hold time from TCK rise
20
-
25
-
25
-
2-mA drive
23
J11
TCK fall to Data
t _{TDO_ZDV} ^{Valid from High-Z}
4-mA drive
8-mA drive
15
-
14
8-mA drive with slew rate control
18
Max
10
-
-
-
10
10
-
-
-
-
35
26
25
29
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
598
July 16, 2014
Texas Instruments-Production Data