LM3S5C36 Datasheet, PDF (311/1068 Pages) Texas Instruments – Stellaris® LM3S5C36 Microcontroller

Stellaris^® LM3S5C36 Microcontroller
7.2.3.3
7.2.3.4
Interrupts
The Flash memory controller can generate interrupts when the following conditions are observed:
■ Programming Interrupt - signals when a program or erase action is complete.
■ Access Interrupt - signals when a program or erase action has been attempted on a 2-kB block
of memory that is protected by its corresponding FMPPEn bit.
The interrupt events that can trigger a controller-level interrupt are defined in the Flash Controller
Masked Interrupt Status (FCMIS) register (see page 323) by setting the corresponding MASK bits.
If interrupts are not used, the raw interrupt status is always visible via the Flash Controller Raw
Interrupt Status (FCRIS) register (see page 322).
Interrupts are always cleared (for both the FCMIS and FCRIS registers) by writing a 1 to the
corresponding bit in the Flash Controller Masked Interrupt Status and Clear (FCMISC) register
(see page 324).
Flash Memory Programming
The Stellaris devices provide a user-friendly interface for Flash memory programming. All
erase/program operations are handled via three registers: Flash Memory Address (FMA), Flash
Memory Data (FMD), and Flash Memory Control (FMC). Note that if the debug capabilities of the
microcontroller have been deactivated, resulting in a "locked" state, a recovery sequence must be
performed in order to reactivate the debug module. See “Recovering a "Locked"
Microcontroller” on page 172.
During a Flash memory operation (write, page erase, or mass erase) access to the Flash memory
is inhibited. As a result, instruction and literal fetches are held off until the Flash memory operation
is complete. If instruction execution is required during a Flash memory operation, the code that is
executing must be placed in SRAM and executed from there while the flash operation is in progress.
Caution – The Flash memory is divided into sectors of electrically separated address ranges of 4 KB
each, aligned on 4 KB boundaries. Erase/program operations on a 1-KB page have an electrical effect
on the other three 1-KB pages within the sector. A specific 1-KB page must be erased after 6 total
erase/program cycles occur to the other pages within its 4-KB sector. The following sequence of operations
on a 4-KB sector of Flash memory (Page 0..3) provides an example:
■ Page 3 is erase and programmed with values.
■ Page 0, Page 1, and Page 2 are erased and then programmed with values. At this point Page 3 has
been affected by 3 erase/program cycles.
■ Page 0, Page 1, and Page 2 are again erased and then programmed with values. At this point Page
3 has been affected by 6 erase/program cycles.
■ If the contents of Page 3 must continue to be valid, Page 3 must be erased and reprogrammed before
any other page in this sector has another erase or program operation.
To program a 32-bit word
1. Write source data to the FMD register.
2. Write the target address to the FMA register.
January 23, 2012
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