LM3S6100 Datasheet, PDF (30/559 Pages) Texas Instruments – Stellaris® LM3S6100 Microcontroller

Architectural Overview
– IEEE 1149.1-1990 compatible Test Access Port (TAP) controller
– Four-bit Instruction Register (IR) chain for storing JTAG instructions
– IEEE standard instructions: BYPASS, IDCODE, SAMPLE/PRELOAD, EXTEST and INTEST
– ARM additional instructions: APACC, DPACC and ABORT
– Integrated ARM Serial Wire Debug (SWD)
■ Internal Memory
– 64 KB single-cycle flash
• User-managed flash block protection on a 2-KB block basis
• User-managed flash data programming
• User-defined and managed flash-protection block
– 16 KB single-cycle SRAM
■ GPIOs
– 10-30 GPIOs, depending on configuration
– 5-V-tolerant in input configuration
– Fast toggle capable of a change every two clock cycles
– Programmable control for GPIO interrupts
• Interrupt generation masking
• Edge-triggered on rising, falling, or both
• Level-sensitive on High or Low values
– Bit masking in both read and write operations through address lines
– Pins configured as digital inputs are Schmitt-triggered.
– Programmable control for GPIO pad configuration
• Weak pull-up or pull-down resistors
• 2-mA, 4-mA, and 8-mA pad drive for digital communication; up to four pads can be
configured with an 18-mA pad drive for high-current applications
• Slew rate control for the 8-mA drive
• Open drain enables
• Digital input enables
■ General-Purpose Timers
30
June 18, 2012
Texas Instruments-Production Data