DS90UR905Q-Q1 Datasheet, PDF (10/58 Pages) Texas Instruments – 5- to 65-MHz, 24-bit Color FPD-Link II Serializer and Deserializer

DS90UR905Q-Q1, DS90UR906Q-Q1
SNLS313H – SEPTEMBER 2009 – REVISED JULY 2015
www.ti.com
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)^(1)(2)(3).
Supply voltage – V_DDn (1.8 V)
Supply voltage – V_DDIO
LVCMOS I/O voltage
Receiver input voltage
Driver output voltage
Junction temperature
48L RHS package
60L NKB package
Storage temperature
Maximum power dissipation capacity at 25°C
Derate above 25°C
Maximum power dissipation capacity at 25°C
Derate above 25°C
MIN
MAX
UNIT
–0.3
2.5
V
–0.3
4
V
–0.3
VDDIO + 0.3
V
–0.3
VDD + 0.3
V
–0.3
VDD + 0.3
V
150
°C
215
mW
1/θ_JA
470
mW/°C
mW
1/θ_JA
mW/°C
–65
150
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office or Distributors for availability and
specifications.
(3) For soldering specifications see product folder at www.ti.com and SNOA549.
7.2 ESD Ratings
Human body model (HBM), per AEC Q100-002⁽¹⁾
VALUE
±8000
Charged-device model (CDM), per AEC Q100-011
±1000
Machine Model (MM)
±250
V_(ESD) Electrostatic discharge
ISO10605 ⁽²⁾
ISO10605 ⁽³⁾
IEC 61000-4-2⁽³⁾
Air Discharge (D_OUT+, D_OUT−)
Contact Discharge (D_OUT+, D_OUT−)
Air Discharge (R_IN+, R_IN−)
Contact Discharge (R_IN+, R_IN−)
Air Discharge (D_OUT+, D_OUT−)
Contact Discharge (D_OUT+, D_OUT−)
Air Discharge (R_IN+, R_IN−)
Contact Discharge (R_IN+, R_IN−)
Air Discharge (D_OUT+, D_OUT−)
Contact Discharge (D_OUT+, D_OUT−)
Air Discharge (R_IN+, R_IN−)
Contact Discharge (R_IN+, R_IN−)
≥±30000
≥±10000
≥±30000
≥±10000
≥±15000
≥±10000
≥±15000
≥±10000
≥±25000
≥±8000
≥±25000
≥±8000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
(2) R_D = 2 kΩ, C_S = 150 pF or R_D = 2 kΩ, C_S = 330 pF or R_D = 330 Ω, C_S = 150 pF
(3) R_D = 330 Ω, C_S = 330 pF
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
Supply voltage (V_DDn)
LVCMOS supply voltage (V_DDIO)
OR LVCMOS supply voltage (V_DDIO)
Operating free-air temperature (T_A)
PCLK clock frequency
1.71
1.71
3
−40
5
NOM
1.8
1.8
3.3
25
MAX
1.89
1.89
3.6
105
65
UNIT
V
UNIT
V
V
°C
MHz
10
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