C8051F99X_10 Datasheet, PDF (60/322 Pages) Silicon Laboratories – Ultra Low Power, 8-2 kB Flash, Capacitive Sensing MCU

C8051F99x-C8051F98x
Table 4.13. IREF0 Electrical Characteristics
V_DD = 1.8 to 3.6 V, –40 to +85 °C, unless otherwise specified.
Parameter
Conditions
Min
Typ
Max
Static Performance
Resolution
6
Output Compliance Range
Integral Nonlinearity
Low Power Mode, Source
0
High Current Mode, Source
0
Low Power Mode, Sink
0.3
High Current Mode, Sink
0.8
— V_DD – 0.4
— V_DD – 0.8
—
V_DD
—
V_DD
— <±0.2 ±1.0
Differential Nonlinearity
— <±0.2 ±1.0
Offset Error
— <±0.1 ±0.5
Low Power Mode, Source
—
—
±5
Full Scale Error
High Current Mode, Source —
—
±6
Low Power Mode, Sink
—
—
±8
High Current Mode, Sink
—
—
±8
Absolute Current Error
Low Power Mode
Sourcing 20 µA
—
<±1
±3
Dynamic Performance
Output Settling Time to 1/2 LSB
—
300
—
Startup Time
—
1
—
Power Consumption
Net Power Supply Current 
Low Power Mode, Source
(V_DD supplied to IREF0 minus
any output source current)
IREF0DAT = 000001
IREF0DAT = 111111
—
10
—
—
10
—
High Current Mode, Source
IREF0DAT = 000001
—
10
—
IREF0DAT = 111111
—
10
—
Low Power Mode, Sink
IREF0DAT = 000001
—
1
—
IREF0DAT = 111111
—
11
—
High Current Mode, Sink
IREF0DAT = 000001
—
12
—
IREF0DAT = 111111
—
81
—
Note: Refer to “PWM Enhanced Mode” on page 89 for information on how to improve IREF0 resolution.
Units
bits
V
LSB
LSB
LSB
%
%
%
%
%
ns
µs
µA
µA
µA
µA
µA
µA
µA
µA
60
Rev. 1.0