C8051F99X_10 Datasheet, PDF (47/322 Pages) Silicon Laboratories – Ultra Low Power, 8-2 kB Flash, Capacitive Sensing MCU

C8051F99x-C8051F98x
4.2. Electrical Characteristics
Table 4.2. Global Electrical Characteristics
–40 to +85 °C, 25 MHz system clock unless otherwise specified. See "AN358: Optimizing Low Power Operation of the
‘F9xx" for details on how to achieve the supply current specifications listed in this table.
Parameter
Supply Voltage (V_DD)
Conditions
Min Typ Max
1.8 2.4 3.6
Minimum RAM Data 
Retention Voltage¹
not in sleep mode
in sleep mode
— 1.4 —
— 0.3 0.45
SYSCLK (System Clock)²
T_SYSH (SYSCLK High Time)
T_SYSL (SYSCLK Low Time)
Specified Operating 
Temperature Range
0 — 25
18 — —
18 — —
–40 — +85
Digital Supply Current—CPU Active (Normal Mode, fetching instructions from Flash)
I_DD ^{3, 4, 5}
V_DD = 1.8–3.6 V, F = 24.5 MHz
(includes precision oscillator current)
— 3.6 4.5
V_DD = 1.8–3.6 V, F = 20 MHz
(includes low power oscillator current)
— 3.1 —
V_DD = 1.8 V, F = 1 MHz
V_DD = 3.6 V, F = 1 MHz
— 225 —
— 290 —
(includes external oscillator/GPIO current)
V_DD = 1.8–3.6 V, F = 32.768 kHz
— 84 —
(includes SmaRTClock oscillator current)
I_DD Frequency 
Sensitivity^{1, 3, 5}
V_DD = 1.8–3.6 V, T = 25 °C, F < 14 MHz ^{— 174 —}
(Flash oneshot active, see Section 14.6)
V_DD = 1.8–3.6 V, T = 25 °C, F > 14 MHz ^{— 88 —}
(Flash oneshot bypassed, see Section
14.6)
Units
V
V
MHz
ns
ns
°C
mA
mA
µA
µA
µA
µA/MHz
µA/MHz
Rev. 1.0
47