C8051F99X_10 Datasheet, PDF (56/322 Pages) Silicon Laboratories – Ultra Low Power, 8-2 kB Flash, Capacitive Sensing MCU

C8051F99x-C8051F98x
Table 4.5. Power Management Electrical Specifications
V_DD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameter
Conditions
Min Typ
Idle Mode Wake-up Time
2
—
Suspend Mode Wake-up Time
CLKDIV = 0x00
—
400
Low Power or Precision Osc.
Sleep Mode Wake-up Time
—
2
Max
Units
3 SYSCLKs
—
ns
—
µs
Table 4.6. Flash Electrical Characteristics
V_DD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameter
Flash Size
Conditions
C8051F980/1/6/7, C8051F990/1/6/7
C8051F982/3/8/9
C8051F985
Endurance
Erase Cycle Time
Write Cycle Time
Min
8192
4096
2048
20 k
28
57
Typ
—
—
—
100k
32
64
Max
Units
—
bytes
—
bytes
—
bytes
—
Erase/Write
Cycles
36
ms
71
µs
Table 4.7. Internal Precision Oscillator Electrical Characteristics
V_DD = 1.8 to 3.6 V; T_A = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Conditions
Min
Typ
Max
Oscillator Frequency
–40 to +85 °C,
V_DD = 1.8–3.6 V
24
24.5
25
Oscillator Supply Current 
(from V_DD)
25 °C; includes bias current
of 90–100 µA
—
300*
—
*Note: Does not include clock divider or clock tree supply current.
Units
MHz
µA
Table 4.8. Internal Low-Power Oscillator Electrical Characteristics
V_DD = 1.8 to 3.6 V; T_A = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Conditions
Min
Typ
Max
Oscillator Frequency
–40 to +85 °C,
V_DD = 1.8–3.6 V
18
20
22
Oscillator Supply Current 
25 °C
(from V_DD)
No separate bias current
—
100*
—
required
*Note: Does not include clock divider or clock tree supply current.
Units
MHz
µA
56
Rev. 1.0