K4J52324QC Datasheet, PDF (53/57 Pages) Samsung semiconductor – 512Mbit GDDR3 SDRAM

K4J52324QC-B
DC CHARACTERISTICS-I
(0°C ≤ Tc ≤85°C ; VDD=2.0V + 0.1V, VDDQ=2.0V + 0.1V)
Parameter
Symbol
Test Condition
Operating Current
(One Bank Active)
ICC1
Precharge Standby Current
in Power-down mode
ICC2P
Precharge Standby Current
in Non Power-down mode
ICC2N
Active Standby Current
power-down mode
ICC3P
Active Standby Current in
in Non Power-down mode
ICC3N
Operating Current
( Burst Mode)
ICC4
Refresh Current
ICC5
Self Refresh Current
ICC6
Operating Current
ICC7
(4Bank interleaving)
Burst Length=4 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
CKE ≤ VIL(max), tCC= tCC(min)
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
CKE ≤ VIL(max), tCC= tCC(min)
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
IOL=0mA ,tCC= tCC(min),
Page Burst, All Banks activated.
tRC≥ tRFC
CKE ≤ 0.2V
Burst Length=4 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
DC CHARACTERISTICS-II
(0°C ≤ Tc ≤85°C ; VDD=1.8V + 0.1V, VDDQ=1.8V + 0.1V)
Parameter
Symbol
Test Condition
Operating Current
(One Bank Active)
ICC1
Precharge Standby Current
in Power-down mode
ICC2P
Precharge Standby Current
in Non Power-down mode
ICC2N
Active Standby Current
power-down mode
ICC3P
Active Standby Current in
in Non Power-down mode
ICC3N
Operating Current
( Burst Mode)
ICC4
Refresh Current
ICC5
Self Refresh Current
ICC6
Operating Current
ICC7
(4Bank interleaving)
Burst Length=4 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
CKE ≤ VIL(max), tCC= tCC(min)
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
CKE ≤ VIL(max), tCC= tCC(min)
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
IOL=0mA ,tCC= tCC(min),
Page Burst, All Banks activated.
tRC≥ tRFC
CKE ≤ 0.2V
Burst Length=4 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
Note : 1. Measured with outputs open and ODT off
2. Refresh period is 32ms
512M GDDR3 SDRAM
Version
Unit
-BJ12
-BJ14
510
490
mA
120
110
mA
270
240
mA
140
130
mA
420
400
mA
1075
525
50
1195
980
mA
500
mA
50
mA
1100
mA
-BC14
420
90
200
110
320
830
480
50
935
Version
-BC16
410
85
190
100
315
760
460
50
860
Unit
-BC20
400
mA
80
mA
170
mA
95
mA
310
mA
655
mA
440
mA
50
mA
830
mA
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Rev 1.0 (Mar 2005)