K4J52324QC Datasheet, PDF (2/57 Pages) Samsung semiconductor – 512Mbit GDDR3 SDRAM

K4J52324QC-B
512M GDDR3 SDRAM
Revision History
Revision 1.0 (March 8, 2005)
• Removed -BC10/11/12 from the spec.
• Separated VDD spec as below
- VDD & VDDQ = 2.0V + 0.1V distinguished by part number as -BJ
- VDD & VDDQ = 1.8V + 0.1V distinguished by part number as -BC
Accordingly, defined -BJ12/14 and -BC14/16/20 along with supported operating voltage.
• Changed tRCDR and tRP of -BC16 from 9tCK and 8tCK to 10tCK and 9tCK. Accordingly, tRCDW/tRC/tDAL changed each from 5tCK/
27tCK/17tCK to 6tCK/28tCK/18tCK.
• Changed tRCDR and tRP of -BC20 from 7tCK and 6tCK to 8tCK and 7tCK. Accordingly, tRCDW/tRC/tDAL changed each from 4tCK/
21tCK/13tCK to 5tCK/22tCK/14tCK.
• Added Vendor ID read timing on page 18 & clock frequency change timing on page 19.
• Changed package dimension from 12mm x 14mm to 11mm x 14mm.
• DC spec updated.
• Capacitance values changed. Input(Clock,Address,Command) capacitance changed from 2.0pF/2.5pF to 1.5pF/3.0pF and DQ,DQS
and DM capacitance changed from 2.0pF/2.5pF to 1.5pF/2.0pF.
-2-
Rev 1.0 (Mar 2005)