RX71M_15 Datasheet, PDF (215/228 Pages) Renesas Technology Corp – Renesas MCUs

RX71M Group
5. Electrical Characteristics
Table 5.55 Data Flash Memory Characteristics
Conditions: VCC = AVCC0 = AVCC1 = VCC_USB = V_BATT = 2.7 to 3.6 V, 2.7 ≤ VREFH0 ≤ AVCC0,
VCC_USBA = AVCC_USBA = 3.0 to 3.6 V
VSS = AVSS0 = AVSS1 = VREFL0 = VSS_USB = VSS1_USBA = VSS2_USBA = PVSS_USBA = AVSS_USBA = 0 V,
Temperature range for programming/erasure: T_a = T_opr
FCLK = 4 MHz
20 MHz ≤ FCLK ≤ 60 MHz
Item
Symbol
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Programming time
4 bytes
Erasure time
64 bytes
Blank check time
4 bytes
Reprogramming/erasure cycle*¹
t_DP4
t_DE64
t_DBC4
N_DPEC
Suspend delay time during programming
First suspend delay time during erasure
(in suspend priority mode)
Second suspend delay time during
erasure
(in suspend priority mode)
Suspend delay time during erasing
(in erasure priority mode)
Forced stop command
Data hold time*³
t_DSPD
t_DSESD1
t_DSESD2
t_DSEED
t_FD
t_DDRP
—
—
—
100000
*²
—
—
—
—
—
10
0.66
5.4
—
—
—
—
—
—
TBD
—
3.8
—
0.3
18
—
3
84
—
—
—
100000
—
*²
264
—
—
216
—
—
300
—
—
300
—
—
32
—
—
—
10
—
1.7
ms
10
ms
30
μs
—
Times
120
μs
120
μs
300
μs
300
μs
20
μs
—
Year
Note 1.
Note 2.
Note 3.
Definition of reprogram/erase cycle:
The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000),
erasing can be performed n times for each block. For instance, when 4-byte programming is performed 512 times for different
addresses in 2-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,
programming the same address for several times as one erasing is not enabled (overwriting is prohibited).
This is the minimum number of times to guarantee all the characteristics after reprogramming (guaranteed range is from 1 to the
value of the minimum value).
This shows the characteristics when reprogramming is performed within the specified range, including the minimum value.
R01DS0249EJ0100 Rev.1.00
Jan 15, 2015
Page 215 of 228