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BUK3F00-50WDXX Datasheet, PDF (9/52 Pages) NXP Semiconductors – Controller for TrenchPLUS FETs
NXP Semiconductors
BUK3F00-50WDxx
Controller for TrenchPLUS FETs
9.2 Charge pump
The controller has an internal charge pump circuit to supply the gate voltage required to
operate the high-side FET switches. The charge pump uses an internal oscillator and
internal switches with external pump and storage capacitors.
9.2.1
Charge pump supply: pins VBAT(CP) and GND(CP)
Pins VBAT(CP) and GND(CP) supply power to the internal charge pump. This is derived
from the VBAT supply either via an internal resistor between pins VBAT and VBAT(CP) or by
linking these pins externally. Pin GND(CP) should be connected to pin GND; the grounds
are not internally connected to ensure any charge pump noise does not affect the
measurement circuit. The connections should be decoupled close to the device.
The charge pump supply circuit has an internal overvoltage clamp to protect the
BUK3F00-50WDxx from overvoltage transients and is also protected against ESD.
If connected to a reverse polarity battery voltage, the charge pump supply is protected by
the internal resistor connection to VBAT.
9.2.2 Charge pump boost mode
To ensure fast start-up, the charge pump has a boost mode that operates for a set time.
This mode is triggered at power-on reset and when the charge pump voltage falls below
the charge pump fault threshold or the battery voltage stays below the undervoltage
threshold. If the charge pump voltage is below the fault threshold after the charge pump
boost is completed, then no further boost is possible until the charge pump fault is
cleared.
9.3 Control logic
The control logic is responsible for switching the individual FET channels on and off,
depending on user settings and the implementation of protection methods. It contains
registers used for storing the user settings for channel configurations, current reference
and measurement, diagnostic and watchdog modes. Communication with a controller is
via the SPI-bus.
The digital block is designed to support 8 channels; unused channels should be
programmed off at all times.
9.3.1 Digital control
The device is enabled by pin EN. When pin EN is LOW, the device is in Standby mode and
all FETs are held off by an active switch with a standby resistance between pins GATE
and KELVIN. When pin EN is HIGH, the device is enabled for normal operation. Pin EN
can be used as the reset signal by a controller for the control logic. When pin EN is reset
to HIGH, the device goes through a power-on reset, registers are loaded with their default
values and channels are switched on or off according to the mapping for the individual
device type.
Digital control consists of a number of registers that control the functions. The default
value is loaded during power-on reset and, if the WRITE_PROTECT option is enabled, for
defined registers, when the SPI watchdog times out. For some registers the default setting
can be programmed by metal mask options.
BUK3F00-50WDXX_4
Product data sheet
Rev. 04 — 4 September 2008
© NXP B.V. 2008. All rights reserved.
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