BUK3F00-50WDXX Datasheet, PDF (41/52 Pages) NXP Semiconductors – Controller for TrenchPLUS FETs

NXP Semiconductors
BUK3F00-50WDxx
Controller for TrenchPLUS FETs
Table 34. Protection circuits characteristics …continued
V_BAT = V_CC(MOD) = 13 V; typical values are given at T_amb = 25 °C; limit values are given at T_case = −40 °C to +125 °C; unless
otherwise specified.
Symbol
Parameter
Conditions
Min
Typ Max
Unit
V_hys(trip)otp
over-temperature
protection trip hysteresis
voltage
40
50 60
mV
t_{fltr(trip)}
V_{th(det)oc(TSD)}
trip filter time
temperature sensor
diode open-circuit
detection threshold
voltage
T_amb = −40 °C
T_amb = +125 °C
26
-
57
µs
2.5
-
3.9
V
2.4
-
3.8
V
Overcurrent protection^[2]
V_{th(on)(bat-KEL)}
on-state threshold
voltage between battery
and pin KELVIN
HIGH-to-LOW
LOW-to-HIGH
[3] _1.65
1.95 2.25
V
1.50
1.80 2.10
V
V_{hys(on)(bat-KEL)} on-state hysteresis
voltage from battery to
pin KELVIN
-
150 -
mV
∆I_trip/I_trip
relative trip current
OCH; R_IREFCURR = 24.9 kΩ ^[3][4] −7.5
+3 +15
%
variation
type 50WDFY; TONOCH; ^[4][5]
V_sense = 3.5 V;
[6]
R_IREFCURR = 24.9 kΩ;
high-side switch in turn-on
state
trip ratio ≥ 5
−10
+5 +20
%
trip ratio ≤ 4
−7.5
+7.5 +22.5
%
other 50WDxx types;
[4][5]
TONOCH; V_sense = 2.5 V;
[6]
R_IREFCURR = 24.9 kΩ;
high-side switch in turn-on
state
trip ratio ≥ 5
−10
+5 +20
%
trip ratio ≤ 4
−7.5
+7.5 +22.5
%
∆t_blank/t_blank
relative blanking time
variation
[7] ₀
-
28
%
V_th(sense)low
low sense threshold
HIGH-to-LOW; TONOCH
1
voltage
operation
1.25 1.5
V
Open-circuit detection
I_det(oc)on
on-state open-circuit
detection current
DIG_OLTH[3:0] = 3;
R_IREFCURR = 24.9 kΩ;
all ranges
open-circuit detected
-
-
0.5 / 255 × µA
I_{meas(ADC)(fs)}
open-circuit not detected
4.5 / 255 × -
-
µA
I_{meas(ADC)(fs)}
BUK3F00-50WDXX_4
Product data sheet
Rev. 04 — 4 September 2008
© NXP B.V. 2008. All rights reserved.
41 of 52