BUK3F00-50WDXX Datasheet, PDF (40/52 Pages) NXP Semiconductors – Controller for TrenchPLUS FETs

NXP Semiconductors
BUK3F00-50WDxx
Controller for TrenchPLUS FETs
Table 33. Gate drive high-side switches characteristics
V_BAT = V_CC(MOD) = 13 V; typical values are given at T_amb = 25 °C; limit values are given at T_case = −40 °C to +125 °C; unless
otherwise specified.
Symbol
Parameter
Conditions
Min Typ Max Unit
Gate drive for high-side switches
V_GS
V_CL(G)
SR_r
gate-source voltage
gate clamping voltage
rising slew rate
on-state
V_BAT = 5.5 V to 9 V
V_BAT > 9 V
inductive ring-off
4.0 -
7.5 V
5.5 6.5 7.5 V
−28.5 −22.5 −20 V
CTRL_SET[3] = 0 OR V_KELVIN-GND > 2.5 V
(high region); FET C_rss = 210 pF
type 50WDFY
[1]
0.25 0.5 0.6 V/µs
other 50WDxx types
0.5 1
1.2 V/µs
CTRL_SET[3] = 1 AND V_KELVIN-GND < 2.5 V
(low region); FET C_rss = 210 pF
type 50WDFY
0.125 0.25 0.3 V/µs
other 50WDxx types
0.25 0.5 0.6 V/µs
SR_f
falling slew rate
CTRL_SET[3] = 0 OR V_KELVIN-GND > 2.5 V
(high region); FET C_rss = 210 pF
type 50WDFY
[1]
0.25 0.5 0.6 V/µs
other 50WDxx types
0.5 1
1.2 V/µs
R_{o(GATE-KELVIN)} output resistance between
pin GATE and pin KELVIN
CTRL_SET[3] = 1 AND V_KELVIN-GND < 2.5 V
(low region); FET C_rss = 210 pF
Standby mode; pin EN = LOW
gate hold-off
0.25 0.5
[2] _{70 130}
[2] _{70 130}
0.6 V/µs
230 Ω
230 Ω
I_G(sc)
short-circuit gate current
loss of ground; pin GND = V_BAT
channel on; short-circuit to ground
30 80 200 kΩ
-
-
2.5 mA
[1] If fixed gate slew rate option is set, then rising and falling slew rates are constant irrespective of V_KELVIN-GND. For accurate measurement
of slew rates, V_BAT supply must remain constant during test.
[2] Specification includes pin KELVIN series resistance.
Table 34. Protection circuits characteristics
V_BAT = V_CC(MOD) = 13 V; typical values are given at T_amb = 25 °C; limit values are given at T_case = −40 °C to +125 °C; unless
otherwise specified.
Symbol
Parameter
Conditions
Min
Typ Max
Unit
Overtemperature protection
I_F
forward current
R_IREFTEMP = 24.9 kΩ
236
248 260
µA
V_trip(otp)
over-temperature
R_IREFTEMP = 24.9 kΩ
[1]
protection trip voltage
trip level setting = 00b
2.235
2.305 2.355
V
trip level setting = 01b
2.178
2.248 2.298
V
trip level setting = 10b
2.088
2.158 2.208
V
trip level setting = 11b
1.933
2.003 2.053
V
BUK3F00-50WDXX_4
Product data sheet
Rev. 04 — 4 September 2008
© NXP B.V. 2008. All rights reserved.
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