BUK3F00-50WDXX Datasheet, PDF (32/52 Pages) NXP Semiconductors – Controller for TrenchPLUS FETs

NXP Semiconductors
BUK3F00-50WDxx
Controller for TrenchPLUS FETs
Table 22. External component requirements
Component Remark
Charge pump capacitors
C_p
non-electrolytic; connect between pins CPP and CPN
C_stg
non-electrolytic; connect between pins V_BAT(CP) and CT
Current reference and measurement resistors
R_IREFTEMP connect between pins IREFTEMP and GND
R_IREFCURR connect between pins IREFCURR and GND
R_IMEAS
connect between pins IMEAS and GND
for sense currents up to 3 × I_{meas(ADC)(fs)}
for sense currents up to 8 × I_{meas(ADC)(fs)}
Digital output pull-up resistors
R_INTN
connect between pins INTN and V_CC(LOG)EXT
R_WDTON
connect between pins WDTON and V_CC(LOG)EXT
TrenchPLUS FET sense resistance^[4]
R_sense
I_{meas(ADC)(fs)} = 0.5 mA
I_{meas(ADC)(fs)} = 1.0 mA
I_{meas(ADC)(fs)} = 1.5 mA
I_{meas(ADC)(fs)} = 2.0 mA
Module supply decoupling
C_mod
electrolytic
R_flt
connect between pins V_CC(MOD) plus V_CC(DIGC) and supply
C_flt
non-electrolytic; connect between pins V_CC(MOD) plus
V_CC(DIGC) and GND
Optional charge pump filtering
R_flt(CP)
charge pump filter resistor connect between pin V_BAT and
battery supply
C_flt(CP)
charge pump filter capacitors connect between pin V_BAT and
GND and between R_flt(CP) and GND
Optional gate C_iss compensation
C_gate(comp) for FETs with low C_iss
Application circuit decoupling
C_rf
value to be determined in the application circuit
Load resistor
R_L
value to be determined in the application circuit
Direct input pin resistors (not shown in Figure 8)
R_INP
connect between pins V_CC(LOG)EXT, V_CC(MOD) and pins IN0 to
IN3 as required.
Value
20 nF (min)
1 µF (min)
[1] _{24.9 kΩ ± 1 %}
[2] _{24.9 kΩ ± 1 %}
[3] _{10 kΩ ± 2 %}
[3] _{4.7 kΩ ± 2 %}
3.3 kΩ (min); 10 kΩ (typ); 100 kΩ (max)
3.3 kΩ (min); 10 kΩ (typ); 100 kΩ (max)
100 Ω (min); 700 Ω (max)
50 Ω (min); 350 Ω (max)
33.3 Ω (min); 233.3 Ω (max)
25 Ω (min); 125 Ω (max)
100 µF ± 20 %
[5] _{10 Ω ± 2 %}
[5] _{100 nF ± 5 %}
[6] _{20 Ω (max)}
100 nF (max)
1 nF ± 5 %
-
-
50 kΩ ± 2 %
[1] Sets I_F to nominal 250 µA.
[2] Sets I_IREFCURR to nominal 50 µA.
[3] Selection of R_IMEAS for sufficient dynamic range is also dependent on voltage of V_CC(MEASC). Values quoted assume V_CC(MEASC) = 5 V.
[4] R_sense is the drain-source resistance of the sense cells of the TrenchPLUS FET at the nominal drain current. It can be estimated from
the product of the current-sense ratio and the drain-source resistance of the main FET.
[5] Pins V_CC(MOD) and V_CC(DIGC) can each have separate filtering for good decoupling.
BUK3F00-50WDXX_4
Product data sheet
Rev. 04 — 4 September 2008
© NXP B.V. 2008. All rights reserved.
32 of 52