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BUK3F00-50WDXX Datasheet, PDF (39/52 Pages) NXP Semiconductors – Controller for TrenchPLUS FETs | |||
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NXP Semiconductors
BUK3F00-50WDxx
Controller for TrenchPLUS FETs
Table 31. Pulse-width modulation characteristics
VBAT = VCC(MOD) = 13 V; typical values are given at Tamb = 25 °C; limit values are given at Tcase = â40 °C to +125 °C; unless
otherwise speciï¬ed.
Symbol
Parameter
Conditions
Min
Typ Max Unit
Pulse-width modulator
âfPWM/fPWM relative PWM frequency variation
PWM input: pin INP
[1] â20
-
+20 %
VIL
LOW-level input voltage
VIH
HIGH-level input voltage
Vhys(I)
input hysteresis voltage
VCL(i)
input clamping voltage
Cin
input capacitance
Rpd
pull-down resistance
PWM output: pin PWMMON
1
-
-
V
-
-
2
V
200
-
700
mV
9.5
10.5 11.5 V
-
10
-
pF
50
100
250
kâ¦
VOL
VOH(log)(ext)
LOW-level output voltage
external logic HIGH-level output
voltage
II = 1.6 mA
IO = 1 mA
-
-
VCC(LOG)EXT â 0.4 -
0.4
V
-
V
[1] Relative PWM frequency error includes clock frequency variation.
Table 32. Current measurement characteristics
VBAT = VCC(MOD) = 13 V; typical values are given at Tamb = 25 °C; limit values are given at Tcase = â40 °C to +125 °C; unless
otherwise speciï¬ed.
Symbol Parameter
Conditions
Min Typ Max Unit
Current measurement[1]
EADC(I) ADC error (current)
all ranges; RIREFCURR = 24.9 kâ¦
0.01 Ã Imeas(ADC)(fs)
0.20 Ã Imeas(ADC)(fs)
0.80 Ã Imeas(ADC)(fs)
type 50WDFE
[2]
[3] â2
-
â4
-
â11 -
+2
bit
+4
bit
+15 bit
other 50WDxx types
â13 -
+13 bit
IO(meas)
measure output current
all ranges; VCC(MEASC) = 5 V; RIMEAS = 4.7 kâ¦;
RIREFCURR = 24.9 kâ¦
0.00 Ã Imeas(ADC)(fs)
0.20 Ã Imeas(ADC)(fs)
1.00 Ã Imeas(ADC)(fs)
8.00 Ã Imeas(ADC)(fs)
-
0
5
µA
15
20
25
µA
92.5 102.5 112.5 µA
660 820 980 µA
[1] If measured without a FET, then connect a suitable resistor between pins VBAT and SENSE to ensure stability.
[2] ADC accuracy ensured when VBAT and VCC(MOD) > 9 V.
[3] ADC used at this level for on-state open-circuit detection.
BUK3F00-50WDXX_4
Product data sheet
Rev. 04 â 4 September 2008
© NXP B.V. 2008. All rights reserved.
39 of 52
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