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| BUK3F00-50WDXX Datasheet, PDF (35/52 Pages) NXP Semiconductors – Controller for TrenchPLUS FETs | |||
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NXP Semiconductors
BUK3F00-50WDxx
Controller for TrenchPLUS FETs
Table 25.
Symbol
tw(SCSN)
tsu(SDI)
th(SDI)
tSCLKH
tSCLKL
Recommended operating conditions â¦continued
Parameter
Conditions
SCSN pulse width
SDI set-up time
SDI hold time
SCLK HIGH time
SCLK LOW time
Min Typ Max Unit
2
-
-
µs
10
-
-
ns
10
-
-
ns
50
-
-
ns
50
-
-
ns
[1] When VBAT < 9 V, the charge pump cannot be guaranteed to drive the external MOSFETs to achieve their speciï¬ed RDSon.
[2] Higher slew rates can give uncontrolled device turn-on, device turn-off or channel switching.
[3] For SDO output characteristics; see Table 30 âSPI and watchdog characteristicsâ.
SCSN
SCLK
SDI
SDO
tsu(SCSN)
tsu(SDI)
th(SDI)
tv(SDO)
tSCLKH
tSCLKL
The shaded areas indicate the time that output data is not valid.
Fig 9. SPI timing deï¬nitions
tw(SCSN)
tdis(SDO)
td(SCSN)
th(SDO)
001aaf463
15. Thermal characteristics
Table 26. Thermal characteristics
Symbol Parameter
Rth(j-a) thermal resistance from junction to ambient
Rth(j-pcb)
Rth(j-c)
thermal resistance from junction to
printed-circuit board
thermal resistance from junction to case
Conditions
mounted on single-layer PCB, size
11.43 cm à 7.62 cm (4.5 inch à 3.0 inch)
in free air
at 1 m/s
at 2.5 m/s
board cooled by cold plate
case cooled at constant temperature
Typ Unit
66 K/W
54 K/W
50 K/W
23 K/W
35 K/W
BUK3F00-50WDXX_4
Product data sheet
Rev. 04 â 4 September 2008
© NXP B.V. 2008. All rights reserved.
35 of 52
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