BUK3F00-50WDXX Datasheet, PDF (36/52 Pages) NXP Semiconductors – Controller for TrenchPLUS FETs

NXP Semiconductors
BUK3F00-50WDxx
Controller for TrenchPLUS FETs
16. Characteristics
Table 27. Supplies characteristics
V_BAT = V_CC(MOD) = 13 V; typical values are given at T_amb = 25 °C; limit values are given at T_case = −40 °C to +125 °C; unless
otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
Unit
Supplies: pins V_BAT, V_BAT(CP), V_CC(MOD), V_CC(LOG)EXT and V_CC(MEASC)
Standby and quiescent currents (pin EN = LOW)
I_stb(bat)
battery standby current V_BAT = V_BAT(CP) = 52 V
[1][2] _-
1.25 5
µA
I_stb(mod)
module standby current V_CC(MOD) = V_CC(DIGC) = 52 V
[3][2] _-
6.75 15
µA
I_q(log)ext
external logic quiescent V_CC(LOG)EXT = 5 V; pins SCSN and WDEN ^[4] -
-
1
µA
current
not connected
I_q(meas)
measure quiescent
current
V_CC(MEASC) = 5 V
--1
µA
Operating currents (pin EN = HIGH)
I_oper(bat)
battery operating current V_BAT = V_BAT(CP) = 13 V;
I_SENSE = 2 mA [I_{meas(ADC)(fs)}]
[1][5] ₃
-
10
mA
I_bat(M)
peak battery current
V_BAT = V_BAT(CP) = 40 V; I_SENSE = 6 × 2 mA ^[1][5] -
-
12.5
mA
[I_{meas(ADC)(fs)}]
I_oper(mod)
module operating current V_CC(MOD) = V_CC(DIGC) = 13 V;
I_SENSE = 2 mA [I_{meas(ADC)(fs)}]
[3][5] ₅
-
10
mA
I_mod(M)
peak module current
V_CC(MOD) = V_CC(DIGC) = 40 V; I_SENSE = 6 × ^[3][5] -
-
12.5
mA
2 mA [I_{meas(ADC)(fs)}]
I_log(ext)M peak external logic
V_CC(LOG)EXT = 5 V; pin WDEN = LOW; pin
[4] _-
-
450
µA
current
SDO at 3 MHz; C_L = 20 pF
I_oper(meas) measure operating
current
V_CC(MEASC) = 5 V;
R_IREFCURR = R_IREFTEMP = 24.9 kΩ
- - 1.5 ×
µA
I_O(meas) + 30
Transient voltages: pins V_BAT, V_CC(MOD), V_CC(LOG)EXT, V_BAT(CP), CPP, CPN, CT, GATE, KELVIN, SENSE
V_CL
clamping voltage
I_CL = 10 mA; t_p = 300 µs
67.5 - 80
V
Battery supply: pin V_BAT and V_BAT(CP)
Normal battery operation
V_th(uv)bat
battery undervoltage
threshold voltage
HIGH-to-LOW
LOW-to-HIGH
[6] _{4.7 -}
5.2
V
4.95 - 5.4
V
V_hys(uv)bat battery undervoltage
hysteresis voltage
[6] _{140 200 250}
mV
V_th(low)bat battery low threshold
voltage
HIGH-to-LOW
LOW-to-HIGH
[6] _{1.85 -}
2.15
V
[6] _{2.1 -}
2.4
V
V_hys(low)bat battery low hysteresis
voltage
[6] _{150 225 300}
mV
Reverse battery operation
V_G-bat
voltage from gate to
battery
I_R(bat)
battery reverse current
Module supply: pin V_CC(MOD)
V_th(uv)mod module undervoltage
threshold voltage
V_BAT = −4 V
V_BAT = −30 V
V_BAT = V_BAT(CP) = −30 V
HIGH-to-LOW
LOW-to-HIGH
- 3.0 -
V
8 - 11
V
[1] _-
-
10
mA
4.1 - 4.55
V
4.2 - 4.6
V
BUK3F00-50WDXX_4
Product data sheet
Rev. 04 — 4 September 2008
© NXP B.V. 2008. All rights reserved.
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