MC68HC908JK1 Datasheet, PDF (43/210 Pages) Motorola, Inc – MC68HC908JK1

FLASH Memory (FLASH)
FLASH Program Operation
4.7 FLASH Program Operation
Programming of the FLASH memory is done on a row basis. A row
consists of 32 consecutive bytes starting from addresses $XX00,
$XX20, $XX40, $XX60, $XX80, $XXA0, $XXC0 or $XXE0. Use this
step-by-step procedure to program a row of FLASH memory:
(Figure 4-2 shows a flowchart of the programming algorithm.)
NOTE: In order to avoid program disturbs, the row must be erased before any
byte on that row is programmed.
1. Set the PGM bit. This configures the memory for program
operation and enables the latching of address and data for
programming.
2. Write any data to any FLASH location within the address range of
the row to be programmed.
3. Wait for a time, t_nvs (10µs).
4. Set the HVEN bit.
5. Wait for a time, t_pgs (5µs).
6. Write data to the byte being programmed.
7. Wait for time, t_PROG (30µs).
8. Repeat step 6 and 7 until all the bytes within the row are
programmed.
9. Clear the PGM bit.
10. Wait for time, t_nvh (5µs).
11. Clear the HVEN bit.
12. After time, t_rcv (1µs), the memory can be accessed in read mode
again.
This program sequence is repeated throughout the memory until all data
is programmed.
MC68H(R)C908JL3 — Rev. 1.0
MOTOROLA
FLASH Memory (FLASH)
Technical Data
43