MC68HC908JK1 Datasheet, PDF (41/210 Pages) Motorola, Inc – MC68HC908JK1

FLASH Memory (FLASH)
FLASH Block Erase Operation
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
MASS — Mass Erase Control Bit
This read/write bit configures the memory for mass erase operation or
block erase operation when the ERASE bit is set.
1 = Mass Erase operation selected
0 = Block Erase operation selected
ERASE — Erase Control Bit
This read/write bit configures the memory for erase operation. This bit
and the PGM bit should not be set to 1 at the same time.
1 = Erase operation selected
0 = Erase operation not selected
PGM — Program Control Bit
This read/write bit configures the memory for program operation. This
bit and the ERASE bit should not be set to 1 at the same time.
1 = Program operation selected
0 = Program operation not selected
4.5 FLASH Block Erase Operation
Use the following procedure to erase a block of FLASH memory. A block
consists of 64 consecutive bytes starting from addresses $XX00,
$XX40, $XX80 or $XXC0. The 48-byte User Interrupt Vectors area also
forms a block. Any block within the 4K bytes User Memory area
($EC00–$FBFF) can be erased alone. The 48-byte User Interrupt Vector
blocks can not be erased alone due to security concern. Mass erase is
required to erase this block.
1. Set the ERASE bit and clear the MASS bit in the FLASH Control
Register.
2. Write any data to any FLASH location within the address range of
the block to be erased.
3. Wait for a time, t_nvs (10µs).
4. Set the HVEN bit.
MC68H(R)C908JL3 — Rev. 1.0
MOTOROLA
FLASH Memory (FLASH)
Technical Data
41