PIC16F753 Datasheet, PDF (197/238 Pages) Microchip Technology – 14/16-Pin, Flash-Based 8-Bit CMOS Microcontrollers

PIC16F753/HV753
22.8 DC Characteristics: PIC16F753/HV753-I (Industrial)
PIC16F753/HV753-E (Extended) (Continued)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C  TA  +85°C for industrial
-40°C  TA  +125°C for extended
Param.
No.
Sym.
Characteristic
Min.
Typ† Max. Units
Conditions
Capacitive Loading Specs on
D101* CIO
All I/O pins
—
—
50
pF
Program Flash Memory
D130 EP
Cell Endurance
10K
100K
—
E/W -40°C  TA +85°C
D130A ED
Cell Endurance
1K
10K
—
E/W +85°C  TA +125°C
D131 VPR
VDD for Read
VMIN
—
5.5
V VMIN = Minimum operating
voltage
D132 VPEW VDD for Bulk Erase/Write
4.5
—
5.5
V
D132A VPEW VDD for Row Erase/Write
VMIN
—
5.5
V
D133 TPEW Erase/Write cycle time
—
2
2.5
ms
D134 TRETD Characteristic Retention
40
—
—
Year Provided no other specifications
are violated
* These parameters are characterized but not tested.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: Negative current is defined as current sourced by the pin.
2: The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent
normal operating conditions. Higher leakage current may be measured at different input voltages.
3: This specification applies to RA3/MCLR configured as RA3 with the internal weak pull-up disabled.
4: This specification applies to all weak pull-up pins, including the weak pull-up found on RA3/MCLR. When RA3/MCLR is
configured as MCLR Reset pin, the weak pull-up is always enabled.
 2013 Microchip Technology Inc.
Preliminary
D40001709A-page 197