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TLE94106EL Datasheet, PDF (9/75 Pages) Infineon Technologies AG – Six half bridge power outputs
TLE94106EL
General Product Characteristics
3
General Product Characteristics
3.1
Absolute Maximum Ratings
Table 2 Absolute Maximum Ratings1)Tj = -40°C to +150°C
Parameter
Symbol
Values
Min. Typ. Max.
Unit Note or
Test Condition
Voltages
Supply voltage
Supply Voltage Slew Rate
VS
-0.3 – 40
| dVS/dt | –
– 10
V
VS = VS1 = VS2
V/µs VS increasing and
decreasing 1)
Power half-bridge output voltage VOUT
-0.3 –
Logic supply voltage
VDD
-0.3 –
Logic input voltages
(SDI, SCLK, CSN, EN)
VSDI,
-0.3 –
VSCLK,
VCSN, VEN
Logic output voltage
(SDO)
VSDO
-0.3 –
Currents
40 V
5.5 V
VDD V
VDD V
0 V < VOUT < VS
0 V < VS < 40 V
0 V < VS < 40 V
0 V < VDD < 5.5V
0 V < VS < 40 V
0 V < VDD < 5.5V
Continuous Supply Current for VS1 IS1
Continuous Supply Current for VS2 IS2
Current per GND pin
IGND
Output Currents
IOUT
Temperatures
0
– 1.5 A –
0
– 1.5 A –
0
– 2.0 A –
-2.0 – 2.0 A –
Junction temperature
Storage temperature
ESD Susceptibility
Tj
-40 – 150 °C –
Tstg
-50 – 150 °C –
ESD susceptibility OUTn and VSx VESD
pins versus GND. All other pins
-8 – 8
kV JEDEC HBM1)2)
grounded.
ESD susceptibility all pins
VESD
-2 –
ESD susceptibility all pins
VESD
-500 –
ESD susceptibility corner pins
VESD
-750 –
1) Not subject to production test, specified by design
2
kV JEDEC HBM1)2)
500 V
CDM1)3)
750 V
CDM1)3)
2) ESD susceptibility, “JEDEC HBM” according to ANSI/ ESDA/ JEDEC JS001 (1.5 kΩ, 100pF)
3) ESD susceptibility, Charged Device Model “CDM” according JEDEC JESD22-C101
Number
P_4.1.1
P_4.2.2
P_4.1.2
P_4.1.3
P_4.1.4
P_4.1.5
P_4.1.6
P_4.1.7
P_4.1.14
P_4.1.15
P_4.1.8
P_4.1.9
P_4.1.10
P_4.1.11
P_4.1.12
P_4.1.13
Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Data Sheet
9
1.0
2016-09-08