HYB25D256161CE Datasheet, PDF (68/72 Pages) Infineon Technologies AG – 16M x 16 Double Data Rate Graphics DRAM

HYB25D256161CE-[4/5]
256-Mbit Double Data Rate SGRAM
Timing Diagrams
Figure 44 Write with Auto Precharge (Burst Length = 4)
Note:
1. EN AP = Enable Auto Precharge.
2. ACT = Active; RA = Row address; BA = Bank address.
3. NOP commands are shown for ease of illustration; other valid commands may be possible at these times.
4. The Timing reference is shown with respect to Vref-Crossing.
Datasheet
68
Rev.1.0, 2004-02