HYB25D256161CE Datasheet, PDF (50/72 Pages) Infineon Technologies AG – 16M x 16 Double Data Rate Graphics DRAM

HYB25D256161CE-[4/5]
256-Mbit Double Data Rate SGRAM
Electrical Characteristics
4.2
Normal Strength Pull-down and Pull-up Characteristics
1. The nominal pull-down V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve.
2. The full variation in driver pull-down current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
3. The nominal pull-up V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the V-I curve.
4. The full variation in driver pull-up current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
5. The full variation in the ratio of the maximum to minimum pull-up and pull-down current does not exceed 1.7,
for device drain to source voltages from 0.1 to 1.0.
6. The full variation in the ratio of the nominal pull-up to pull-down current should be unity ±10%, for device drain
to source voltages from 0.1 to 1.0 V.
140
120
100
80
60
40
20
0
0
0.5
1
1.5
2
V_DDQ - V_OUT (V)
Figure 29 Normal Strength Pull-down Characteristics
0
-20
-40
-60
-80
-100
-120
-140
-160
0
0.5
1
1.5
2
V_DDQ - V_OUT (V)
Figure 30 Normal Strength Pull-up Characteristics
Maximum
Nominal High
Nominal Low
Minimum
2.5
Minimum
Nominal Low
Nominal High
Maximum
2.5
Datasheet
50
Rev.1.0, 2004-02