HYB25D256161CE Datasheet, PDF (48/72 Pages) Infineon Technologies AG – 16M x 16 Double Data Rate Graphics DRAM

HYB25D256161CE-[4/5]
256-Mbit Double Data Rate SGRAM
Electrical Characteristics
4
Electrical Characteristics
4.1
Operating Conditions
Table 11 Absolute Maximum Ratings
Parameter
Symbol
Min.
Voltage on I/O pins relative to V_SS
Voltage on Inputs relative to V_SS
Voltage on V_DD supply relative to V_SS
Voltage on V_DDQ supply relative to V_SS
Operating Temperature (Ambient)
Storage Temperature (Plastic)
Power Dissipation
Short Circuit Output Current
V_IN, V_OUT –0.5
V_IN
–0.5
V_DD
–0.5
V_DDQ
–0.5
T_A
0
T_STG
–55
P_D
—
I_OUT
—
Values
Typ.
—
—
—
—
—
—
1.5
50
Max.
Unit Note/
Test Condition
V_DDQ + 0.5 V —
+3.6
V—
+3.6
V—
+3.6
V—
+70
°C —
+150
°C —
—
W—
—
mA —
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit.
Table 12 Input and Output Capacitances
Parameter
Symbol
Input Capacitance: CK, CK
C_I1
Delta Input Capacitance
C_dI1
Input Capacitance:
C_I2
All other input-only pins
Delta Input Capacitance:
C_dIO
All other input-only pins
Input/Output Capacitance: DQ, DQS, DM C_IO
Min.
2.0
—
2.0
—
4.0
Values
Unit
Typ. Max.
—
3.0
pF
—
0.25 pF
—
3.0
pF
—
0.5
pF
—
5.0
pF
Note/
Test Condition
P-TSOPII-66-1¹⁾
1)
P-TSOPII-66-1 ¹⁾
1)
P-TSOPII-66-1
2)1)2)
Delta Input/Output Capacitance:
DQ, DQS, DM
C_dIO
—
—
0.5
pF
1)
1) These values are guaranteed by design and are tested on a sample base only. V_DDQ = V_DD = 2.5 V ± 0.2 V, f = 100 MHz,
T_A = 25 °C, V_OUT(DC) = V_DDQ/2, V_OUT (Peak to Peak) 0.2 V. Unused pins are tied to ground.
2) DM inputs are grouped with I/O pins reflecting the fact that they are matched in loading to DQ and DQS to facilitate trace
matching at the board level.
Datasheet
48
Rev.1.0, 2004-02