HYB25D256400BT Datasheet, PDF (56/77 Pages) Infineon Technologies AG – 256-Mbit Double Data Rate SDRAM, Die Rev. B

HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM, Die Rev. B
Weak Strength Driver Pulldown and Pullup Currents
Pulldown Current (mA)
Voltage (V)
Nominal
Low
Nominal
High
Min
Max
0.1
3.4
3.8
2.6
5.0
0.2
6.9
7.6
5.2
9.9
0.3
10.3
11.4
7.8
14.6
0.4
13.6
15.1
10.4
19.2
0.5
16.9
18.7
13.0
23.6
0.6
19.6
22.1
15.7
28.0
0.7
22.3
25.0
18.2
32.2
0.8
24.7
28.2
20.8
35.8
0.9
26.9
31.3
22.4
39.5
1.0
29.0
34.1
24.1
43.2
1.1
30.6
36.9
25.4
46.7
1.2
31.8
39.5
26.2
50.0
1.3
32.8
42.0
26.6
53.1
1.4
33.5
44.4
26.8
56.1
1.5
34.0
46.6
27.0
58.7
1.6
34.3
48.6
27.2
61.4
1.7
34.5
50.5
27.4
63.5
1.8
34.8
52.2
27.7
65.6
1.9
35.1
53.9
27.8
67.7
2.0
35.4
55.0
28.0
69.8
2.1
35.6
56.1
28.1
71.6
2.2
35.8
57.1
28.2
73.3
2.3
36.1
57.7
28.3
74.9
2.4
36.3
58.2
28.3
76.4
2.5
36.5
58.7
28.4
77.7
2.6
36.7
59.2
28.5
78.8
2.7
36.8
59.6
28.6
79.7
Evaluation Conditions for I/O Driver Characteristics
Operating Temperature
V_DD / V_DDQ
Process Corner
Nominal
25 °C
2.5V
typical
Nominal
Low
-3.5
-6.9
-10.3
-13.6
-16.9
-19.4
-21.5
-23.3
-24.8
-26.0
-27.1
-27.8
-28.3
-28.6
-28.7
-28.9
-28.9
-29.0
-29.2
-29.2
-29.3
-29.5
-29.5
-29.6
-29.7
-29.8
-29.9
Pullup Current (mA)
Nominal
High
Min
-4.3
-2.6
-8.2
-5.2
-12.0
-7.8
-15.7
-10.4
-19.3
-13.0
-22.9
-15.7
-26.5
-18.2
-30.1
-20.4
-33.6
-21.6
-37.1
-21.9
-40.3
-22.1
-43.1
-22.2
-45.8
-22.3
-48.4
-22.4
-50.7
-22.6
-52.9
-22.7
-55.0
-22.7
-56.8
-22.8
-58.7
-22.9
-60.0
-22.9
-61.2
-23.0
-62.4
-23.0
-63.1
-23.1
-63.8
-23.2
-64.4
-23.2
-65.1
-23.3
-65.8
-23.3
Max
-5.0
-9.9
-14.6
-19.2
-23.6
-28.0
-32.2
-35.8
-39.5
-43.2
-46.7
-50.0
-53.1
-56.1
-58.7
-61.4
-63.5
-65.6
-67.7
-69.8
-71.6
-73.3
-74.9
-76.4
-77.7
-78.8
-79.7
Minimum
70 °C
2.3V
slow-slow
Maximum
0 °C
2.7V
fast-fast
Page 56 of 77
2003-01-09, V1.1