HYB25D256400BT Datasheet, PDF (25/77 Pages) Infineon Technologies AG – 256-Mbit Double Data Rate SDRAM, Die Rev. B

HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM, Die Rev. B
Random Read Accesses: CAS Latencies (Burst Length = 2, 4 or 8)
CK
CK
Command
Address
DQS
DQ
CAS Latency = 2
Read
BAa, COL n
Read
BAa, COL x
CL=2
Read
BAa, COL b
Read
BAa, COL g
NOP
NOP
DOa-n DOa-n' DOa-x DOa-x' DOa-b DOa-b’ DOa-g
CK
CK
Command
Address
DQS
DQ
CAS Latency = 2.5
Read
BAa, COL n
Read
Read
BAa, COL x
BAa, COL b
CL=2.5
Read
BAa, COL g
NOP
NOP
DOa-n DOa-n' DOa-x DOa-x' DOa-b DOa-b’
DO a-n, etc. = data out from bank a, column n etc.
n' etc. = odd or even complement of n, etc. (i.e., column address LSB inverted).
Reads are to active rows in any banks.
Shown with nominal t_AC, t_DQSCK, and t_DQSQ.
Don’t Care
Page 25 of 77
2003-01-09, V1.1