English
Language : 

HYB25D256400BT Datasheet, PDF (18/77 Pages) Infineon Technologies AG – 256-Mbit Double Data Rate SDRAM, Die Rev. B
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM, Die Rev. B
Truth Table 1a: Commands
Name (Function)
Deselect (Nop)
No Operation (Nop)
Active (Select Bank And Activate Row)
Read (Select Bank And Column, And Start Read Burst)
Write (Select Bank And Column, And Start Write Burst)
Burst Terminate
Precharge (Deactivate Row In Bank Or Banks)
Auto Refresh Or Self Refresh (Enter Self Refresh Mode)
Mode Register Set
CS RAS CAS WE
H
X
X
X
L
H
H
H
L
L
H
H
L
H
L
H
L
H
L
L
L
H
H
L
L
L
H
L
L
L
L
H
L
L
L
L
Address
X
X
Bank/Row
Bank/Col
Bank/Col
X
Code
X
Op-Code
MNE
NOP
NOP
ACT
Read
Write
BST
PRE
AR / SR
MRS
Notes
1, 9
1, 9
1, 3
1, 4
1, 4
1, 8
1, 5
1, 6, 7
1, 2
1. CKE is HIGH for all commands shown except Self Refresh.
2. BA0, BA1 select either the Base or the Extended Mode Register (BA0 = 0, BA1 = 0 selects Mode Register; BA0 = 1, BA1 = 0
selects Extended Mode Register; other combinations of BA0-BA1 are reserved; A0-A12 provide the op-code to be written to the
selected Mode Register.)
3. BA0-BA1 provide bank address and A0-A12 provide row address.
4. BA0, BA1 provide bank address; A0-Ai provide column address (where i = 8for x16, i = 9 for x8 and 9, 11 for x4); A10 HIGH
enables the Auto Precharge feature (nonpersistent), A10 LOW disables the Auto Precharge feature.
5. A10 LOW: BA0, BA1 determine which bank is precharged.
A10 HIGH: all banks are precharged and BA0, BA1 are “Don’t Care.”
6. This command is AUTO REFRESH if CKE is HIGH; Self Refresh if CKE is LOW.
7. Internal refresh counter controls row and bank addressing; all inputs and I/Os are “Don’t Care” except for CKE.
8. Applies only to read bursts with Auto Precharge disabled; this command is undefined (and should not be used) for read bursts with
Auto Precharge enabled or for write bursts
9. Deselect and NOP are functionally interchangeable.
Truth Table 1b: DM Operation
Name (Function)
Write Enable
Write Inhibit
1. Used to mask write data; provided coincident with the corresponding data.
DM
DQs Notes
L
Valid
1
H
X
1
Page 18 of 77
2003-01-09, V1.1