HYB25D256400BT Datasheet, PDF (55/77 Pages) Infineon Technologies AG – 256-Mbit Double Data Rate SDRAM, Die Rev. B

HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM, Die Rev. B
Weak Strength Pulldown and Pullup Characteristics
Weak Strength Pulldown Characteristics
80
70
60
50
40
30
20
10
0
0,0
0,5
1,0
1,5
Vout [V]
Maximum
Typical high
Typical low
Minim um
2,0
2,5
1. The weak pulldown V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve
2. The weak pullup V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve.
3. The full variation in driver pullup current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
Weak Strength Pullup Characteristics
0,0
0,0
0,5
1,0
1,5
2,0
2,5
-10,0
-20,0
Minimum
-30,0
-40,0
Typical low
-50,0
-60,0
Typical high
-70,0
-80,0
Vout [V]
Maximum
4. The full variation in the ratio of the maximum to minimum pullup and pulldown current does not exceed
1.7, for device drain to source voltages from 0.1 to 1.0.
5. The full variation in the ratio of the nominal pullup to pulldown current should be unity ± 10%, for device
drain to source voltages from 0.1 to 1.0V.
Page 55 of 77
2003-01-09, V1.1